FDN359BN. Аналоги и основные параметры
Наименование производителя: FDN359BN
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 0.5 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 2.7 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 5 ns
Cossⓘ - Выходная емкость: 105 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.046 Ohm
Тип корпуса: SSOT3
Аналог (замена) для FDN359BN
- подборⓘ MOSFET транзистора по параметрам
FDN359BN даташит
fdn359bn f095.pdf
January 2006 FDN359BN N-Channel Logic Level PowerTrenchTM MOSFET Features General Description 2.7 A, 30 V. RDS(ON)= 0.046 @ VGS = 10 V This N-Channel Logic Level MOSFET is produced RDS(ON)= 0.060 @ VGS = 4.5 V using Fairchild s Semiconductor s advanced PowerTrench process that has been especially tailored Very fast switching speed. to minimize on-state r
fdn359bn.pdf
January 2006 FDN359BN N-Channel Logic Level PowerTrenchTM MOSFET Features General Description 2.7 A, 30 V. RDS(ON)= 0.046 @ VGS = 10 V This N-Channel Logic Level MOSFET is produced RDS(ON)= 0.060 @ VGS = 4.5 V using Fairchild s Semiconductor s advanced PowerTrench process that has been especially tailored Very fast switching speed. to minimize on-state r
fdn359bn.pdf
January 2006 FDN359BN N-Channel Logic Level PowerTrenchTM MOSFET Features General Description 2.7 A, 30 V. RDS(ON)= 0.046 @ VGS = 10 V This N-Channel Logic Level MOSFET is produced RDS(ON)= 0.060 @ VGS = 4.5 V using Fairchild s Semiconductor s advanced PowerTrench process that has been especially tailored Very fast switching speed. to minimize on-state r
fdn359an.pdf
April 1999 FDN359AN N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced 2.7 A, 30 V. RDS(ON) = 0.046 @ VGS = 10 V using Fairchild Semiconductor's advanced RDS(ON) = 0.060 @ VGS = 4.5 V. PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain Very fast switching
Другие MOSFET... FDN302P , FDN304P , FDN304PZ , FDN306P , FDN308P , FDN327N , FDN342P , FDN352AP , RFP50N06 , STM4884A , FDN361BN , STM4884 , FDN372S , STM4880 , FDN5618P , FDN5630 , FDN8601 .
History: KP101G
History: KP101G
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MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10
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