FDN359BN PDF Specs and Replacement
Type Designator: FDN359BN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 105 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm
Package: SSOT3
FDN359BN substitution
FDN359BN PDF Specs
fdn359bn f095.pdf
January 2006 FDN359BN N-Channel Logic Level PowerTrenchTM MOSFET Features General Description 2.7 A, 30 V. RDS(ON)= 0.046 @ VGS = 10 V This N-Channel Logic Level MOSFET is produced RDS(ON)= 0.060 @ VGS = 4.5 V using Fairchild s Semiconductor s advanced PowerTrench process that has been especially tailored Very fast switching speed. to minimize on-state r... See More ⇒
fdn359bn.pdf
January 2006 FDN359BN N-Channel Logic Level PowerTrenchTM MOSFET Features General Description 2.7 A, 30 V. RDS(ON)= 0.046 @ VGS = 10 V This N-Channel Logic Level MOSFET is produced RDS(ON)= 0.060 @ VGS = 4.5 V using Fairchild s Semiconductor s advanced PowerTrench process that has been especially tailored Very fast switching speed. to minimize on-state r... See More ⇒
fdn359bn.pdf
January 2006 FDN359BN N-Channel Logic Level PowerTrenchTM MOSFET Features General Description 2.7 A, 30 V. RDS(ON)= 0.046 @ VGS = 10 V This N-Channel Logic Level MOSFET is produced RDS(ON)= 0.060 @ VGS = 4.5 V using Fairchild s Semiconductor s advanced PowerTrench process that has been especially tailored Very fast switching speed. to minimize on-state r... See More ⇒
fdn359an.pdf
April 1999 FDN359AN N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced 2.7 A, 30 V. RDS(ON) = 0.046 @ VGS = 10 V using Fairchild Semiconductor's advanced RDS(ON) = 0.060 @ VGS = 4.5 V. PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain Very fast switching... See More ⇒
Detailed specifications: FDN302P , FDN304P , FDN304PZ , FDN306P , FDN308P , FDN327N , FDN342P , FDN352AP , RFP50N06 , STM4884A , FDN361BN , STM4884 , FDN372S , STM4880 , FDN5618P , FDN5630 , FDN8601 .
History: P1006BT
Keywords - FDN359BN MOSFET specs
FDN359BN cross reference
FDN359BN equivalent finder
FDN359BN pdf lookup
FDN359BN substitution
FDN359BN replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
