All MOSFET. FDN359BN Datasheet

 

FDN359BN Datasheet and Replacement


   Type Designator: FDN359BN
   Marking Code: 359B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 2.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 5 nC
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm
   Package: SSOT3
 

 FDN359BN substitution

   - MOSFET ⓘ Cross-Reference Search

 

FDN359BN Datasheet (PDF)

 ..1. Size:97K  fairchild semi
fdn359bn f095.pdf pdf_icon

FDN359BN

January 2006 FDN359BN N-Channel Logic Level PowerTrenchTM MOSFET Features General Description 2.7 A, 30 V. RDS(ON)= 0.046 @ VGS = 10 V This N-Channel Logic Level MOSFET is produced RDS(ON)= 0.060 @ VGS = 4.5 V using Fairchilds Semiconductors advancedPowerTrench process that has been especially tailored Very fast switching speed. to minimize on-state r

 ..2. Size:101K  fairchild semi
fdn359bn.pdf pdf_icon

FDN359BN

January 2006 FDN359BN N-Channel Logic Level PowerTrenchTM MOSFET Features General Description 2.7 A, 30 V. RDS(ON)= 0.046 @ VGS = 10 V This N-Channel Logic Level MOSFET is produced RDS(ON)= 0.060 @ VGS = 4.5 V using Fairchilds Semiconductors advancedPowerTrench process that has been especially tailored Very fast switching speed. to minimize on-state r

 ..3. Size:101K  onsemi
fdn359bn.pdf pdf_icon

FDN359BN

January 2006 FDN359BN N-Channel Logic Level PowerTrenchTM MOSFET Features General Description 2.7 A, 30 V. RDS(ON)= 0.046 @ VGS = 10 V This N-Channel Logic Level MOSFET is produced RDS(ON)= 0.060 @ VGS = 4.5 V using Fairchilds Semiconductors advancedPowerTrench process that has been especially tailored Very fast switching speed. to minimize on-state r

 8.1. Size:117K  fairchild semi
fdn359an.pdf pdf_icon

FDN359BN

April 1999 FDN359AN N-Channel Logic Level PowerTrenchTM MOSFET General Description FeaturesThis N-Channel Logic Level MOSFET is produced2.7 A, 30 V. RDS(ON) = 0.046 @ VGS = 10 Vusing Fairchild Semiconductor's advanced RDS(ON) = 0.060 @ VGS = 4.5 V.PowerTrench process that has been especially tailoredto minimize on-state resistance and yet maintainVery fast switching

Datasheet: FDN302P , FDN304P , FDN304PZ , FDN306P , FDN308P , FDN327N , FDN342P , FDN352AP , 7N60 , STM4884A , FDN361BN , STM4884 , FDN372S , STM4880 , FDN5618P , FDN5630 , FDN8601 .

Keywords - FDN359BN MOSFET datasheet

 FDN359BN cross reference
 FDN359BN equivalent finder
 FDN359BN lookup
 FDN359BN substitution
 FDN359BN replacement

 

 
Back to Top

 


 
.