FDN359BN Datasheet. Specs and Replacement

Type Designator: FDN359BN  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm

Package: SSOT3

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FDN359BN datasheet

 ..1. Size:97K  fairchild semi
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FDN359BN

January 2006 FDN359BN N-Channel Logic Level PowerTrenchTM MOSFET Features General Description 2.7 A, 30 V. RDS(ON)= 0.046 @ VGS = 10 V This N-Channel Logic Level MOSFET is produced RDS(ON)= 0.060 @ VGS = 4.5 V using Fairchild s Semiconductor s advanced PowerTrench process that has been especially tailored Very fast switching speed. to minimize on-state r... See More ⇒

 ..2. Size:101K  fairchild semi
 fdn359bn.pdf pdf_icon

FDN359BN

January 2006 FDN359BN N-Channel Logic Level PowerTrenchTM MOSFET Features General Description 2.7 A, 30 V. RDS(ON)= 0.046 @ VGS = 10 V This N-Channel Logic Level MOSFET is produced RDS(ON)= 0.060 @ VGS = 4.5 V using Fairchild s Semiconductor s advanced PowerTrench process that has been especially tailored Very fast switching speed. to minimize on-state r... See More ⇒

 ..3. Size:101K  onsemi
 fdn359bn.pdf pdf_icon

FDN359BN

January 2006 FDN359BN N-Channel Logic Level PowerTrenchTM MOSFET Features General Description 2.7 A, 30 V. RDS(ON)= 0.046 @ VGS = 10 V This N-Channel Logic Level MOSFET is produced RDS(ON)= 0.060 @ VGS = 4.5 V using Fairchild s Semiconductor s advanced PowerTrench process that has been especially tailored Very fast switching speed. to minimize on-state r... See More ⇒

 8.1. Size:117K  fairchild semi
 fdn359an.pdf pdf_icon

FDN359BN

April 1999 FDN359AN N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced 2.7 A, 30 V. RDS(ON) = 0.046 @ VGS = 10 V using Fairchild Semiconductor's advanced RDS(ON) = 0.060 @ VGS = 4.5 V. PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain Very fast switching... See More ⇒

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Detailed specifications: FDN302P, FDN304P, FDN304PZ, FDN306P, FDN308P, FDN327N, FDN342P, FDN352AP, RFP50N06, STM4884A, FDN361BN, STM4884, FDN372S, STM4880, FDN5618P, FDN5630, FDN8601

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