All MOSFET. FDN359BN Datasheet

 

FDN359BN MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDN359BN
   Marking Code: 359B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 0.5 W
   Maximum Drain-Source Voltage |Vds|: 30 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
   Maximum Drain Current |Id|: 2.7 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 5 nC
   Rise Time (tr): 5 nS
   Drain-Source Capacitance (Cd): 105 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.046 Ohm
   Package: SSOT3

 FDN359BN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDN359BN Datasheet (PDF)

 ..1. Size:97K  fairchild semi
 fdn359bn f095.pdf

FDN359BN FDN359BN

January 2006 FDN359BN N-Channel Logic Level PowerTrenchTM MOSFET Features General Description 2.7 A, 30 V. RDS(ON)= 0.046 @ VGS = 10 V This N-Channel Logic Level MOSFET is produced RDS(ON)= 0.060 @ VGS = 4.5 V using Fairchilds Semiconductors advancedPowerTrench process that has been especially tailored Very fast switching speed. to minimize on-state r

 ..2. Size:101K  fairchild semi
 fdn359bn.pdf

FDN359BN FDN359BN

January 2006 FDN359BN N-Channel Logic Level PowerTrenchTM MOSFET Features General Description 2.7 A, 30 V. RDS(ON)= 0.046 @ VGS = 10 V This N-Channel Logic Level MOSFET is produced RDS(ON)= 0.060 @ VGS = 4.5 V using Fairchilds Semiconductors advancedPowerTrench process that has been especially tailored Very fast switching speed. to minimize on-state r

 ..3. Size:101K  onsemi
 fdn359bn.pdf

FDN359BN FDN359BN

January 2006 FDN359BN N-Channel Logic Level PowerTrenchTM MOSFET Features General Description 2.7 A, 30 V. RDS(ON)= 0.046 @ VGS = 10 V This N-Channel Logic Level MOSFET is produced RDS(ON)= 0.060 @ VGS = 4.5 V using Fairchilds Semiconductors advancedPowerTrench process that has been especially tailored Very fast switching speed. to minimize on-state r

 8.1. Size:117K  fairchild semi
 fdn359an.pdf

FDN359BN FDN359BN

April 1999 FDN359AN N-Channel Logic Level PowerTrenchTM MOSFET General Description FeaturesThis N-Channel Logic Level MOSFET is produced2.7 A, 30 V. RDS(ON) = 0.046 @ VGS = 10 Vusing Fairchild Semiconductor's advanced RDS(ON) = 0.060 @ VGS = 4.5 V.PowerTrench process that has been especially tailoredto minimize on-state resistance and yet maintainVery fast switching

 8.2. Size:231K  onsemi
 fdn359an.pdf

FDN359BN FDN359BN

FDN359AN N-Channel Logic Level PowerTrenchTM MOSFET Features General Description2.7 A, 30 V. RDS(ON) = 0.046 @ VGS = 10 VThis N-Channel Logic Level MOSFET is produced RDS(ON) = 0.060 @ VGS = 4.5 V.using ON Semiconductor's advanced PowerTrench process that has been especially tailored Very fast switching.to minimize on-state resistance and yet maintain Low gate cha

 8.3. Size:843K  cn shikues
 fdn359an.pdf

FDN359BN FDN359BN

FDN359ANN-Channel Enhancement Mode MOSFET Feature DS(ON) GS 30V/3.0A, R = 45m(MAX) @V = 10V. DS(ON) GS R =50m(MAX) @V = 4.5V. DS(ON) GS R =65m(MAX) @V = 2.5V. DS(ON) .Super High dense cell design for extremely low R Reliable and Rugged. SOT-23 SOT-23 for Surface Mount Package. Applications Power Management Portable Equipment and Battery Powered System

Datasheet: FDN302P , FDN304P , FDN304PZ , FDN306P , FDN308P , FDN327N , FDN342P , FDN352AP , STF13NM60N , STM4884A , FDN361BN , STM4884 , FDN372S , STM4880 , FDN5618P , FDN5630 , FDN8601 .

 

 
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