FDN359BN
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDN359BN
Marking Code: 359B
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 2.7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 5
nC
trⓘ - Rise Time: 5
nS
Cossⓘ -
Output Capacitance: 105
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.046
Ohm
Package:
SSOT3
FDN359BN
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDN359BN
Datasheet (PDF)
..1. Size:97K fairchild semi
fdn359bn f095.pdf 
January 2006 FDN359BN N-Channel Logic Level PowerTrenchTM MOSFET Features General Description 2.7 A, 30 V. RDS(ON)= 0.046 @ VGS = 10 V This N-Channel Logic Level MOSFET is produced RDS(ON)= 0.060 @ VGS = 4.5 V using Fairchilds Semiconductors advancedPowerTrench process that has been especially tailored Very fast switching speed. to minimize on-state r
..2. Size:101K fairchild semi
fdn359bn.pdf
January 2006 FDN359BN N-Channel Logic Level PowerTrenchTM MOSFET Features General Description 2.7 A, 30 V. RDS(ON)= 0.046 @ VGS = 10 V This N-Channel Logic Level MOSFET is produced RDS(ON)= 0.060 @ VGS = 4.5 V using Fairchilds Semiconductors advancedPowerTrench process that has been especially tailored Very fast switching speed. to minimize on-state r
..3. Size:101K onsemi
fdn359bn.pdf
January 2006 FDN359BN N-Channel Logic Level PowerTrenchTM MOSFET Features General Description 2.7 A, 30 V. RDS(ON)= 0.046 @ VGS = 10 V This N-Channel Logic Level MOSFET is produced RDS(ON)= 0.060 @ VGS = 4.5 V using Fairchilds Semiconductors advancedPowerTrench process that has been especially tailored Very fast switching speed. to minimize on-state r
8.1. Size:117K fairchild semi
fdn359an.pdf
April 1999 FDN359AN N-Channel Logic Level PowerTrenchTM MOSFET General Description FeaturesThis N-Channel Logic Level MOSFET is produced2.7 A, 30 V. RDS(ON) = 0.046 @ VGS = 10 Vusing Fairchild Semiconductor's advanced RDS(ON) = 0.060 @ VGS = 4.5 V.PowerTrench process that has been especially tailoredto minimize on-state resistance and yet maintainVery fast switching
8.2. Size:231K onsemi
fdn359an.pdf
FDN359AN N-Channel Logic Level PowerTrenchTM MOSFET Features General Description2.7 A, 30 V. RDS(ON) = 0.046 @ VGS = 10 VThis N-Channel Logic Level MOSFET is produced RDS(ON) = 0.060 @ VGS = 4.5 V.using ON Semiconductor's advanced PowerTrench process that has been especially tailored Very fast switching.to minimize on-state resistance and yet maintain Low gate cha
8.3. Size:843K cn shikues
fdn359an.pdf
FDN359ANN-Channel Enhancement Mode MOSFET Feature DS(ON) GS 30V/3.0A, R = 45m(MAX) @V = 10V. DS(ON) GS R =50m(MAX) @V = 4.5V. DS(ON) GS R =65m(MAX) @V = 2.5V. DS(ON) .Super High dense cell design for extremely low R Reliable and Rugged. SOT-23 SOT-23 for Surface Mount Package. Applications Power Management Portable Equipment and Battery Powered System
Datasheet: IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.
