STM4880 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

STM4880 datasheet

..1. Size:165K samhop
stm4880.pdf pdf_icon

STM4880 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 17 @ VGS=10V Suface Mount Package. 30V 9.6A 26 @ VGS=4.5V ESD Protected. D 5 4 G 6 3 D S 7 2 D S S O-8 8 1 D S 1 (TA=25 C unless otherwise noted) ABSOLU

8.1. Size:697K samhop
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S T M4884A S amHop Microelectronics C orp. Dec 28 2004 ver1.1 N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y F E AT UR E S S uper high dense cell design for low R DS (ON). V DS S ID R DS (ON) ( m W ) typ R ugged and reliable. 6 @ V G S = 10V 30V 12A S urface Mount Package. 8.5 @ V G S = 4.5V S O-8 1 ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwis

8.2. Size:182K samhop
stm4886e.pdf pdf_icon

Green Product STM4886E a S mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 5 @ VGS=10V Suface Mount Package. 30V 17.8A 7.5 @ VGS=4.5V ESD Protected. D 5 4 G D 6 3 S 7 2 D S S O-8 8 1 D S 1 (TA=25 C unless other

8.3. Size:92K samhop
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Gre r r P Pr Pr Pro STM4884 SamHop Micrpelectronics Corp. Ver 3.2 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Typ Rugged and reliable. 5.5 @VGS=10V Suface Mount Package. 30V 13A 8.5 @VGS=4.5V D 5 4 G 6 3 D S 7 2 D S SO-8 D 8 1 S 1 (TA=25 C unless otherwise