STM4880 - параметры транзистора MOSFET, его аналоги, datasheet

STM4880 Datasheet (PDF)

..1. Size:165K samhop
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STM4880aS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.17 @ VGS=10VSuface Mount Package.30V 9.6A26 @ VGS=4.5VESD Protected.D 5 4 G6 3D S7 2D SS O-88 1D S1(TA=25C unless otherwise noted)ABSOLU

8.1. Size:697K samhop
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S T M4884AS amHop Microelectronics C orp. Dec 28 2004 ver1.1 N-C hannel E nhancement Mode Field E ffect TransistorP R ODUC T S UMMAR Y F E AT UR E SS uper high dense cell design for low R DS (ON).V DS S ID R DS (ON) ( m W ) typ R ugged and reliable.6 @ V G S = 10V30V 12AS urface Mount Package.8.5 @ V G S = 4.5VS O-81ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwis

8.2. Size:182K samhop
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GreenProductSTM4886EaS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.5 @ VGS=10VSuface Mount Package.30V 17.8A7.5 @ VGS=4.5VESD Protected.D 5 4 GD 6 3S7 2D SS O-88 1D S1(TA=25C unless other

8.3. Size:92K samhop
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GrerrPPrPrProSTM4884SamHop Micrpelectronics Corp.Ver 3.2N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m ) TypRugged and reliable.5.5 @VGS=10VSuface Mount Package.30V 13A8.5 @VGS=4.5VD 5 4 G6 3D S7 2D SSO-8D 8 1S1(TA=25C unless otherwise