STM4880 PDF Specs and Replacement
Type Designator: STM4880
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 176 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: SO8
STM4880 substitution
STM4880 PDF Specs
stm4880.pdf
STM4880 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 17 @ VGS=10V Suface Mount Package. 30V 9.6A 26 @ VGS=4.5V ESD Protected. D 5 4 G 6 3 D S 7 2 D S S O-8 8 1 D S 1 (TA=25 C unless otherwise noted) ABSOLU... See More ⇒
stm4884a.pdf
S T M4884A S amHop Microelectronics C orp. Dec 28 2004 ver1.1 N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y F E AT UR E S S uper high dense cell design for low R DS (ON). V DS S ID R DS (ON) ( m W ) typ R ugged and reliable. 6 @ V G S = 10V 30V 12A S urface Mount Package. 8.5 @ V G S = 4.5V S O-8 1 ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwis... See More ⇒
stm4886e.pdf
Green Product STM4886E a S mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 5 @ VGS=10V Suface Mount Package. 30V 17.8A 7.5 @ VGS=4.5V ESD Protected. D 5 4 G D 6 3 S 7 2 D S S O-8 8 1 D S 1 (TA=25 C unless other... See More ⇒
stm4884.pdf
Gre r r P Pr Pr Pro STM4884 SamHop Micrpelectronics Corp. Ver 3.2 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Typ Rugged and reliable. 5.5 @VGS=10V Suface Mount Package. 30V 13A 8.5 @VGS=4.5V D 5 4 G 6 3 D S 7 2 D S SO-8 D 8 1 S 1 (TA=25 C unless otherwise... See More ⇒
Detailed specifications: FDN327N , FDN342P , FDN352AP , FDN359BN , STM4884A , FDN361BN , STM4884 , FDN372S , IRF520 , FDN5618P , FDN5630 , FDN8601 , STM4840 , FDN86246 , FDP025N06 , FDP030N06 , FDP032N08 .
Keywords - STM4880 MOSFET specs
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