FDN86246 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDN86246
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 1.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 1.1 nS
Cossⓘ - Capacitancia de salida: 21 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.261 Ohm
Encapsulados: SSOT3
Búsqueda de reemplazo de FDN86246 MOSFET
- Selecciónⓘ de transistores por parámetros
FDN86246 datasheet
fdn86246.pdf
December 2010 FDN86246 N-Channel PowerTrench MOSFET 150 V, 1.6 A, 261 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 261 m at VGS = 10 V, ID = 1.6 A Semiconductor s advanced Power Trench process that has Max rDS(on) = 359 m at VGS = 6 V, ID = 1.4 A been optimized for rDS(on), switching performance and ruggedness. High pe
fdn86265p.pdf
May 2014 FDN86265P P-Channel PowerTrench MOSFET -150 V, -0.8 A, 1.2 Features General Description This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 1.2 at VGS = -10 V, ID = -0.8 A Semiconductor s advanced PowerTrench process that has Max rDS(on) = 1.4 at VGS = -6 V, ID = -0.7 A been optimized for the on-state resistance and yet maintain superior switch
fdn8601.pdf
July 2010 FDN8601 N-Channel PowerTrench MOSFET 100 V, 2.7 A, 109 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 109 m at VGS = 10 V, ID = 1.5 A Semiconductor s advanced Power Trench process that has Max rDS(on) = 175 m at VGS = 6 V, ID = 1.2 A been optimized for rDS(on), switching performance and ruggedness. High perform
fdn86501lz.pdf
April 2015 FDN86501LZ N-Channel Shielded Gate PowerTrench MOSFET 60 V, 2.6 A, 116 m Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor s advanced PowerTrench process that Max rDS(on) = 116 m at VGS = 10 V, ID = 2.6 A incorporates Shielded Gate technology. This process has been optimized for rDS(on),
Otros transistores... FDN361BN , STM4884 , FDN372S , STM4880 , FDN5618P , FDN5630 , FDN8601 , STM4840 , 8N60 , FDP025N06 , FDP030N06 , FDP032N08 , FDP036N10A , STM4639 , FDP038AN06A0 , FDP040N06 , FDP045N10AF102 .
History: DMP4065SQ | SI1317DL | FDPF5N50T | FDD6680S
History: DMP4065SQ | SI1317DL | FDPF5N50T | FDD6680S
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10 | ASW80R290E | ASW65R120EFD | ASW65R110E | ASW65R095EFD | ASW65R046EFD | ASW65R041EFDA | ASW65R041E | ASW60R150E | ASW60R090EFDA
Popular searches
tip31cg | s9015 transistor | irf540z | ss8550 transistor | irfp240 mosfet | tip141 | 2n404 | 2n4250
