FDN86246 PDF and Equivalents Search

 

FDN86246 Specs and Replacement

Type Designator: FDN86246

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 1.1 nS

Cossⓘ - Output Capacitance: 21 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.261 Ohm

Package: SSOT3

FDN86246 substitution

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FDN86246 datasheet

 ..1. Size:157K  fairchild semi
fdn86246.pdf pdf_icon

FDN86246

December 2010 FDN86246 N-Channel PowerTrench MOSFET 150 V, 1.6 A, 261 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 261 m at VGS = 10 V, ID = 1.6 A Semiconductor s advanced Power Trench process that has Max rDS(on) = 359 m at VGS = 6 V, ID = 1.4 A been optimized for rDS(on), switching performance and ruggedness. High pe... See More ⇒

 8.1. Size:270K  fairchild semi
fdn86265p.pdf pdf_icon

FDN86246

May 2014 FDN86265P P-Channel PowerTrench MOSFET -150 V, -0.8 A, 1.2 Features General Description This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 1.2 at VGS = -10 V, ID = -0.8 A Semiconductor s advanced PowerTrench process that has Max rDS(on) = 1.4 at VGS = -6 V, ID = -0.7 A been optimized for the on-state resistance and yet maintain superior switch... See More ⇒

 9.1. Size:158K  fairchild semi
fdn8601.pdf pdf_icon

FDN86246

July 2010 FDN8601 N-Channel PowerTrench MOSFET 100 V, 2.7 A, 109 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 109 m at VGS = 10 V, ID = 1.5 A Semiconductor s advanced Power Trench process that has Max rDS(on) = 175 m at VGS = 6 V, ID = 1.2 A been optimized for rDS(on), switching performance and ruggedness. High perform... See More ⇒

 9.2. Size:683K  fairchild semi
fdn86501lz.pdf pdf_icon

FDN86246

April 2015 FDN86501LZ N-Channel Shielded Gate PowerTrench MOSFET 60 V, 2.6 A, 116 m Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor s advanced PowerTrench process that Max rDS(on) = 116 m at VGS = 10 V, ID = 2.6 A incorporates Shielded Gate technology. This process has been optimized for rDS(on),... See More ⇒

Detailed specifications: FDN361BN, STM4884, FDN372S, STM4880, FDN5618P, FDN5630, FDN8601, STM4840, 8N60, FDP025N06, FDP030N06, FDP032N08, FDP036N10A, STM4639, FDP038AN06A0, FDP040N06, FDP045N10AF102

Keywords - FDN86246 MOSFET specs

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