All MOSFET. FDN86246 Datasheet

 

FDN86246 Datasheet and Replacement


   Type Designator: FDN86246
   Marking Code: 246
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 1.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 2.9 nC
   tr ⓘ - Rise Time: 1.1 nS
   Cossⓘ - Output Capacitance: 21 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.261 Ohm
   Package: SSOT3
 

 FDN86246 substitution

   - MOSFET ⓘ Cross-Reference Search

 

FDN86246 Datasheet (PDF)

 ..1. Size:157K  fairchild semi
fdn86246.pdf pdf_icon

FDN86246

December 2010FDN86246N-Channel PowerTrench MOSFET 150 V, 1.6 A, 261 m Features General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 261 m at VGS = 10 V, ID = 1.6 ASemiconductors advanced Power Trench process that has Max rDS(on) = 359 m at VGS = 6 V, ID = 1.4 Abeen optimized for rDS(on), switching performance and ruggedness. High pe

 8.1. Size:270K  fairchild semi
fdn86265p.pdf pdf_icon

FDN86246

May 2014FDN86265PP-Channel PowerTrench MOSFET -150 V, -0.8 A, 1.2 Features General DescriptionThis P-Channel MOSFET is produced using Fairchild Max rDS(on) = 1.2 at VGS = -10 V, ID = -0.8 ASemiconductors advanced PowerTrench process that has Max rDS(on) = 1.4 at VGS = -6 V, ID = -0.7 Abeen optimized for the on-state resistance and yet maintain superior switch

 9.1. Size:158K  fairchild semi
fdn8601.pdf pdf_icon

FDN86246

July 2010FDN8601N-Channel PowerTrench MOSFET 100 V, 2.7 A, 109 m Features General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 109 m at VGS = 10 V, ID = 1.5 ASemiconductors advanced Power Trench process that has Max rDS(on) = 175 m at VGS = 6 V, ID = 1.2 Abeen optimized for rDS(on), switching performance and ruggedness. High perform

 9.2. Size:683K  fairchild semi
fdn86501lz.pdf pdf_icon

FDN86246

April 2015FDN86501LZN-Channel Shielded Gate PowerTrench MOSFET60 V, 2.6 A, 116 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET TechnologySemiconductors advanced PowerTrench process that Max rDS(on) = 116 m at VGS = 10 V, ID = 2.6 Aincorporates Shielded Gate technology. This process has been optimized for rDS(on),

Datasheet: FDN361BN , STM4884 , FDN372S , STM4880 , FDN5618P , FDN5630 , FDN8601 , STM4840 , K2611 , FDP025N06 , FDP030N06 , FDP032N08 , FDP036N10A , STM4639 , FDP038AN06A0 , FDP040N06 , FDP045N10AF102 .

Keywords - FDN86246 MOSFET datasheet

 FDN86246 cross reference
 FDN86246 equivalent finder
 FDN86246 lookup
 FDN86246 substitution
 FDN86246 replacement

 

 
Back to Top

 


 
.