All MOSFET. FDN86246 Datasheet

 

FDN86246 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDN86246
   Marking Code: 246
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 1.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 2.9 nC
   trⓘ - Rise Time: 1.1 nS
   Cossⓘ - Output Capacitance: 21 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.261 Ohm
   Package: SSOT3

 FDN86246 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDN86246 Datasheet (PDF)

 ..1. Size:157K  fairchild semi
 fdn86246.pdf

FDN86246 FDN86246

December 2010FDN86246N-Channel PowerTrench MOSFET 150 V, 1.6 A, 261 m Features General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 261 m at VGS = 10 V, ID = 1.6 ASemiconductors advanced Power Trench process that has Max rDS(on) = 359 m at VGS = 6 V, ID = 1.4 Abeen optimized for rDS(on), switching performance and ruggedness. High pe

 8.1. Size:270K  fairchild semi
 fdn86265p.pdf

FDN86246 FDN86246

May 2014FDN86265PP-Channel PowerTrench MOSFET -150 V, -0.8 A, 1.2 Features General DescriptionThis P-Channel MOSFET is produced using Fairchild Max rDS(on) = 1.2 at VGS = -10 V, ID = -0.8 ASemiconductors advanced PowerTrench process that has Max rDS(on) = 1.4 at VGS = -6 V, ID = -0.7 Abeen optimized for the on-state resistance and yet maintain superior switch

 9.1. Size:158K  fairchild semi
 fdn8601.pdf

FDN86246 FDN86246

July 2010FDN8601N-Channel PowerTrench MOSFET 100 V, 2.7 A, 109 m Features General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 109 m at VGS = 10 V, ID = 1.5 ASemiconductors advanced Power Trench process that has Max rDS(on) = 175 m at VGS = 6 V, ID = 1.2 Abeen optimized for rDS(on), switching performance and ruggedness. High perform

 9.2. Size:683K  fairchild semi
 fdn86501lz.pdf

FDN86246 FDN86246

April 2015FDN86501LZN-Channel Shielded Gate PowerTrench MOSFET60 V, 2.6 A, 116 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET TechnologySemiconductors advanced PowerTrench process that Max rDS(on) = 116 m at VGS = 10 V, ID = 2.6 Aincorporates Shielded Gate technology. This process has been optimized for rDS(on),

 9.3. Size:272K  onsemi
 fdn8601.pdf

FDN86246 FDN86246

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.4. Size:717K  onsemi
 fdn86501lz.pdf

FDN86246 FDN86246

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: FDN361BN , STM4884 , FDN372S , STM4880 , FDN5618P , FDN5630 , FDN8601 , STM4840 , MMD60R360PRH , FDP025N06 , FDP030N06 , FDP032N08 , FDP036N10A , STM4639 , FDP038AN06A0 , FDP040N06 , FDP045N10AF102 .

 

 
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