FDN86246 - описание и поиск аналогов

 

FDN86246. Аналоги и основные параметры

Наименование производителя: FDN86246

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1.5 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 150 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 1.6 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 1.1 ns

Cossⓘ - Выходная емкость: 21 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.261 Ohm

Тип корпуса: SSOT3

Аналог (замена) для FDN86246

- подборⓘ MOSFET транзистора по параметрам

 

FDN86246 даташит

 ..1. Size:157K  fairchild semi
fdn86246.pdfpdf_icon

FDN86246

December 2010 FDN86246 N-Channel PowerTrench MOSFET 150 V, 1.6 A, 261 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 261 m at VGS = 10 V, ID = 1.6 A Semiconductor s advanced Power Trench process that has Max rDS(on) = 359 m at VGS = 6 V, ID = 1.4 A been optimized for rDS(on), switching performance and ruggedness. High pe

 8.1. Size:270K  fairchild semi
fdn86265p.pdfpdf_icon

FDN86246

May 2014 FDN86265P P-Channel PowerTrench MOSFET -150 V, -0.8 A, 1.2 Features General Description This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 1.2 at VGS = -10 V, ID = -0.8 A Semiconductor s advanced PowerTrench process that has Max rDS(on) = 1.4 at VGS = -6 V, ID = -0.7 A been optimized for the on-state resistance and yet maintain superior switch

 9.1. Size:158K  fairchild semi
fdn8601.pdfpdf_icon

FDN86246

July 2010 FDN8601 N-Channel PowerTrench MOSFET 100 V, 2.7 A, 109 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 109 m at VGS = 10 V, ID = 1.5 A Semiconductor s advanced Power Trench process that has Max rDS(on) = 175 m at VGS = 6 V, ID = 1.2 A been optimized for rDS(on), switching performance and ruggedness. High perform

 9.2. Size:683K  fairchild semi
fdn86501lz.pdfpdf_icon

FDN86246

April 2015 FDN86501LZ N-Channel Shielded Gate PowerTrench MOSFET 60 V, 2.6 A, 116 m Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor s advanced PowerTrench process that Max rDS(on) = 116 m at VGS = 10 V, ID = 2.6 A incorporates Shielded Gate technology. This process has been optimized for rDS(on),

Другие MOSFET... FDN361BN , STM4884 , FDN372S , STM4880 , FDN5618P , FDN5630 , FDN8601 , STM4840 , 8N60 , FDP025N06 , FDP030N06 , FDP032N08 , FDP036N10A , STM4639 , FDP038AN06A0 , FDP040N06 , FDP045N10AF102 .

History: OSG65R1K4DF | ALD1103DB | JVL102Y | AOD423 | STM4639 | IRFB4510 | BSC080N03MSG

 

 

 

 

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