FDN86246 - Даташиты. Аналоги. Основные параметры
Наименование производителя: FDN86246
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 1.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 1.6 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 1.1 ns
Cossⓘ - Выходная емкость: 21 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.261 Ohm
Тип корпуса: SSOT3
Аналог (замена) для FDN86246
FDN86246 Datasheet (PDF)
fdn86246.pdf

December 2010FDN86246N-Channel PowerTrench MOSFET 150 V, 1.6 A, 261 m Features General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 261 m at VGS = 10 V, ID = 1.6 ASemiconductors advanced Power Trench process that has Max rDS(on) = 359 m at VGS = 6 V, ID = 1.4 Abeen optimized for rDS(on), switching performance and ruggedness. High pe
fdn86265p.pdf

May 2014FDN86265PP-Channel PowerTrench MOSFET -150 V, -0.8 A, 1.2 Features General DescriptionThis P-Channel MOSFET is produced using Fairchild Max rDS(on) = 1.2 at VGS = -10 V, ID = -0.8 ASemiconductors advanced PowerTrench process that has Max rDS(on) = 1.4 at VGS = -6 V, ID = -0.7 Abeen optimized for the on-state resistance and yet maintain superior switch
fdn8601.pdf

July 2010FDN8601N-Channel PowerTrench MOSFET 100 V, 2.7 A, 109 m Features General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 109 m at VGS = 10 V, ID = 1.5 ASemiconductors advanced Power Trench process that has Max rDS(on) = 175 m at VGS = 6 V, ID = 1.2 Abeen optimized for rDS(on), switching performance and ruggedness. High perform
fdn86501lz.pdf

April 2015FDN86501LZN-Channel Shielded Gate PowerTrench MOSFET60 V, 2.6 A, 116 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET TechnologySemiconductors advanced PowerTrench process that Max rDS(on) = 116 m at VGS = 10 V, ID = 2.6 Aincorporates Shielded Gate technology. This process has been optimized for rDS(on),
Другие MOSFET... FDN361BN , STM4884 , FDN372S , STM4880 , FDN5618P , FDN5630 , FDN8601 , STM4840 , K2611 , FDP025N06 , FDP030N06 , FDP032N08 , FDP036N10A , STM4639 , FDP038AN06A0 , FDP040N06 , FDP045N10AF102 .
History: LSH65R650HT | LSH65R570GT | FDP038AN06A0 | SFP9610 | SML50H19
History: LSH65R650HT | LSH65R570GT | FDP038AN06A0 | SFP9610 | SML50H19



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