AP4008QD MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP4008QD
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 21 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 13 nS
Cossⓘ - Capacitancia de salida: 84 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
Encapsulados: PDFN3X3
Búsqueda de reemplazo de AP4008QD MOSFET
- Selecciónⓘ de transistores por parámetros
AP4008QD datasheet
9.1. Size:60K ape
ap4002h j.pdf 
AP4002H/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristics RDS(ON) 5 Simple Drive Requirement ID 2A G S Description G AP4002 series are specially designed as chopper regulator, DC/DC converter D S TO-251(J) and power drive application. The APEC MOSFET provid
9.2. Size:94K ape
ap4002i-hf.pdf 
AP4002I-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristics RDS(ON) 5 Simple Drive Requirement ID 2A G RoHS Compliant & Halogen-Free S Description AP4002 series are specially designed as main switching devices for G DS universal 90 265VAC off-line AC/DC co
9.3. Size:107K ape
ap4002t.pdf 
AP4002T RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristics RDS(ON) 5 Simple Drive Requirement ID 400mA G S Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effec
9.4. Size:162K ape
ap4002j.pdf 
AP4002H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristics RDS(ON) 5 Simple Drive Requirement ID 2A G RoHS Compliant & Halogen-Free S Description G Advanced Power MOSFETs from APEC provide the designer with D S TO-251(J) the best combination of fast sw
9.5. Size:178K ape
ap4002h.pdf 
AP4002H/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristics RDS(ON) 5 Simple Drive Requirement ID 2A G S Description G AP4002 series are specially designed as chopper regulator, DC/DC converter D S TO-251(J) and power drive application. The APEC MOSFET provid
9.6. Size:62K ape
ap4002h-hf ap4002j-hf.pdf 
AP4002H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristics RDS(ON) 5 Simple Drive Requirement ID 2A G RoHS Compliant & Halogen-Free S Description G AP4002 series are specially designed as chopper regulator, DC/DC converter D S TO-251(J) and power drive
9.7. Size:184K ape
ap4002p ap4002s.pdf 
AP4002S/P RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristics RDS(ON) 5 Simple Drive Requirement ID 2A G S Description Advanced Power MOSFETs from APEC provide the designer with G the best combination of fast switching, ruggedized device design, low D S TO-263
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History: AP10TN135K