AP4008QD PDF and Equivalents Search

 

AP4008QD Specs and Replacement

Type Designator: AP4008QD

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 21 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 84 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: PDFN3X3

AP4008QD substitution

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AP4008QD datasheet

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AP4008QD

AP4002H/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristics RDS(ON) 5 Simple Drive Requirement ID 2A G S Description G AP4002 series are specially designed as chopper regulator, DC/DC converter D S TO-251(J) and power drive application. The APEC MOSFET provid... See More ⇒

Detailed specifications: AP2045Q, AP20P30Q, AP30H50Q, AP30H80G, AP30H80Q, AP3908GD, AP3908QD, AP3910GD, AO4468, AP4085G, AP4822QD, AP4910GD, AP60P20Q, AP68N06G, AP80N04G, AP80N04Q, AP90N03Q

Keywords - AP4008QD MOSFET specs

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