AP4008QD Datasheet and Replacement
Type Designator: AP4008QD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 21 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 84 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: PDFN3X3
AP4008QD substitution
AP4008QD Datasheet (PDF)
ap4002h j.pdf

AP4002H/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristics RDS(ON) 5 Simple Drive Requirement ID 2AGSDescriptionGAP4002 series are specially designed as chopper regulator, DC/DC converter DSTO-251(J)and power drive application. The APEC MOSFET provid
ap4002i-hf.pdf

AP4002I-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristics RDS(ON) 5 Simple Drive Requirement ID 2AG RoHS Compliant & Halogen-FreeSDescriptionAP4002 series are specially designed as main switching devices forGDSuniversal 90~265VAC off-line AC/DC co
ap4002t.pdf

AP4002TRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristics RDS(ON) 5 Simple Drive Requirement ID 400mAGSDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resistance, extremely efficient andcost-effec
Datasheet: AP2045Q , AP20P30Q , AP30H50Q , AP30H80G , AP30H80Q , AP3908GD , AP3908QD , AP3910GD , IRFP064N , AP4085G , AP4822QD , AP4910GD , AP60P20Q , AP68N06G , AP80N04G , AP80N04Q , AP90N03Q .
History: SFG60N12FF | SFG280N08PF
Keywords - AP4008QD MOSFET datasheet
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History: SFG60N12FF | SFG280N08PF



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