All MOSFET. AP4008QD Datasheet

 

AP4008QD Datasheet and Replacement


   Type Designator: AP4008QD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 21 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 84 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: PDFN3X3
 

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AP4008QD Datasheet (PDF)

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AP4008QD

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 ap4002h j.pdf pdf_icon

AP4008QD

AP4002H/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristics RDS(ON) 5 Simple Drive Requirement ID 2AGSDescriptionGAP4002 series are specially designed as chopper regulator, DC/DC converter DSTO-251(J)and power drive application. The APEC MOSFET provid

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 ap4002i-hf.pdf pdf_icon

AP4008QD

AP4002I-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristics RDS(ON) 5 Simple Drive Requirement ID 2AG RoHS Compliant & Halogen-FreeSDescriptionAP4002 series are specially designed as main switching devices forGDSuniversal 90~265VAC off-line AC/DC co

 9.3. Size:107K  ape
 ap4002t.pdf pdf_icon

AP4008QD

AP4002TRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristics RDS(ON) 5 Simple Drive Requirement ID 400mAGSDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resistance, extremely efficient andcost-effec

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Datasheet: AP2045Q , AP20P30Q , AP30H50Q , AP30H80G , AP30H80Q , AP3908GD , AP3908QD , AP3910GD , AO4468 , AP4085G , AP4822QD , AP4910GD , AP60P20Q , AP68N06G , AP80N04G , AP80N04Q , AP90N03Q .

History: 2SK4213A-ZK

Keywords - AP4008QD MOSFET datasheet

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