AP4008QD. Аналоги и основные параметры
Наименование производителя: AP4008QD
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 21 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 13 ns
Cossⓘ - Выходная емкость: 84 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.022 Ohm
Тип корпуса: PDFN3X3
Аналог (замена) для AP4008QD
- подборⓘ MOSFET транзистора по параметрам
AP4008QD даташит
9.1. Size:60K ape
ap4002h j.pdf 
AP4002H/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristics RDS(ON) 5 Simple Drive Requirement ID 2A G S Description G AP4002 series are specially designed as chopper regulator, DC/DC converter D S TO-251(J) and power drive application. The APEC MOSFET provid
9.2. Size:94K ape
ap4002i-hf.pdf 
AP4002I-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristics RDS(ON) 5 Simple Drive Requirement ID 2A G RoHS Compliant & Halogen-Free S Description AP4002 series are specially designed as main switching devices for G DS universal 90 265VAC off-line AC/DC co
9.3. Size:107K ape
ap4002t.pdf 
AP4002T RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristics RDS(ON) 5 Simple Drive Requirement ID 400mA G S Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effec
9.4. Size:162K ape
ap4002j.pdf 
AP4002H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristics RDS(ON) 5 Simple Drive Requirement ID 2A G RoHS Compliant & Halogen-Free S Description G Advanced Power MOSFETs from APEC provide the designer with D S TO-251(J) the best combination of fast sw
9.5. Size:178K ape
ap4002h.pdf 
AP4002H/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristics RDS(ON) 5 Simple Drive Requirement ID 2A G S Description G AP4002 series are specially designed as chopper regulator, DC/DC converter D S TO-251(J) and power drive application. The APEC MOSFET provid
9.6. Size:62K ape
ap4002h-hf ap4002j-hf.pdf 
AP4002H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristics RDS(ON) 5 Simple Drive Requirement ID 2A G RoHS Compliant & Halogen-Free S Description G AP4002 series are specially designed as chopper regulator, DC/DC converter D S TO-251(J) and power drive
9.7. Size:184K ape
ap4002p ap4002s.pdf 
AP4002S/P RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristics RDS(ON) 5 Simple Drive Requirement ID 2A G S Description Advanced Power MOSFETs from APEC provide the designer with G the best combination of fast switching, ruggedized device design, low D S TO-263
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