AP90N03Q MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP90N03Q
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 46 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 90 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 36 nS
Cossⓘ - Capacitancia de salida: 320 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0042 Ohm
Encapsulados: PDFN3X3-8L
Búsqueda de reemplazo de AP90N03Q MOSFET
- Selecciónⓘ de transistores por parámetros
AP90N03Q datasheet
8.4. Size:1234K cn apm
ap90n02d.pdf 
AP90N02D 20V N-Channel Enhancement Mode MOSFET Description The AP90N02D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =90A DS D R
8.5. Size:2408K cn apm
ap90n06d.pdf
AP90N06D 60V N-Channel Enhancement Mode MOSFET Description The AP90N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =90A DS D R
8.6. Size:1744K cn apm
ap90n08nf.pdf
AP90N08NF 85V N-Channel Enhancement Mode MOSFET Description The AP90N08NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 85V I =95A DS D R
8.7. Size:1413K cn apm
ap90n06p ap90n06t.pdf
AP90N06PIT 60V N-Channel Enhancement Mode MOSFET Description The AP90N06P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =90A DS D R
8.8. Size:1327K cn apm
ap90n06f.pdf
AP90N06F 60V N-Channel Enhancement Mode MOSFET Description The AP90N06F uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =90A DS D R
8.9. Size:1655K cn apm
ap90n02nf.pdf
AP90N02NF 20V N-Channel Enhancement Mode MOSFET Description The AP90N02NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =90 A DS D R
Otros transistores... AP4008QD
, AP4085G
, AP4822QD
, AP4910GD
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, IRF540
, AP90P03G
, AP90P03Q
, APG077N01G
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, ASDM30N55E-R
, ASDM30N65E-R
, ASDM30P11TD-R
, ASDM30P30CTD-R
.
