All MOSFET. AP90N03Q Datasheet

 

AP90N03Q Datasheet and Replacement


   Type Designator: AP90N03Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 46 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: PDFN3X3-8L
 

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AP90N03Q Datasheet (PDF)

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AP90N03Q

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AP90N03Q

AP90N06D 60V N-Channel Enhancement Mode MOSFET Description The AP90N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =90A DS DR

Datasheet: AP4008QD , AP4085G , AP4822QD , AP4910GD , AP60P20Q , AP68N06G , AP80N04G , AP80N04Q , IRF540 , AP90P03G , AP90P03Q , APG077N01G , APG095N01G , ASDM30N55E-R , ASDM30N65E-R , ASDM30P11TD-R , ASDM30P30CTD-R .

History: MCAC60N08Y | AOTF298L | SPB100N06S2L-05 | AOT7S60L | L2N7002KN3T5G | AOTF18N65L | 2SK3989-01MR

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