AP90N03Q Specs and Replacement
Type Designator: AP90N03Q
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 46 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 36 nS
Cossⓘ -
Output Capacitance: 320 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
Package: PDFN3X3-8L
- MOSFET ⓘ Cross-Reference Search
AP90N03Q datasheet
8.4. Size:1234K cn apm
ap90n02d.pdf 
AP90N02D 20V N-Channel Enhancement Mode MOSFET Description The AP90N02D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =90A DS D R ... See More ⇒
8.5. Size:2408K cn apm
ap90n06d.pdf
AP90N06D 60V N-Channel Enhancement Mode MOSFET Description The AP90N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =90A DS D R ... See More ⇒
8.6. Size:1744K cn apm
ap90n08nf.pdf
AP90N08NF 85V N-Channel Enhancement Mode MOSFET Description The AP90N08NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 85V I =95A DS D R ... See More ⇒
8.7. Size:1413K cn apm
ap90n06p ap90n06t.pdf
AP90N06PIT 60V N-Channel Enhancement Mode MOSFET Description The AP90N06P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =90A DS D R ... See More ⇒
8.8. Size:1327K cn apm
ap90n06f.pdf
AP90N06F 60V N-Channel Enhancement Mode MOSFET Description The AP90N06F uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =90A DS D R ... See More ⇒
8.9. Size:1655K cn apm
ap90n02nf.pdf
AP90N02NF 20V N-Channel Enhancement Mode MOSFET Description The AP90N02NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =90 A DS D R ... See More ⇒
Detailed specifications: AP4008QD, AP4085G, AP4822QD, AP4910GD, AP60P20Q, AP68N06G, AP80N04G, AP80N04Q, IRF540, AP90P03G, AP90P03Q, APG077N01G, APG095N01G, ASDM30N55E-R, ASDM30N65E-R, ASDM30P11TD-R, ASDM30P30CTD-R
Keywords - AP90N03Q MOSFET specs
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