AP90P03Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP90P03Q
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 48 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 60 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 534 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm
Paquete / Cubierta: PDFN3X3-8L
Búsqueda de reemplazo de AP90P03Q MOSFET
AP90P03Q Datasheet (PDF)
ap90p03nf.pdf

AP90P03NF -30V P-Channel Enhancement Mode MOSFET Description The AP90P03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-90A DS DR
ap90p01d.pdf

AP90P01D 12V P-Channel Enhancement Mode MOSFET Description The AP90P01D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =12V I =90A DS DR
Otros transistores... AP4822QD , AP4910GD , AP60P20Q , AP68N06G , AP80N04G , AP80N04Q , AP90N03Q , AP90P03G , IRFP460 , APG077N01G , APG095N01G , ASDM30N55E-R , ASDM30N65E-R , ASDM30P11TD-R , ASDM30P30CTD-R , ASDM40N52E-R , AUIRFN8405TR .
History: SSM3J56ACT | STB23N80K5 | S-LN2302BLT1G | AUIRF2804S-7P | 2SK4123LS | 2SK3705 | AP62T02GJ
History: SSM3J56ACT | STB23N80K5 | S-LN2302BLT1G | AUIRF2804S-7P | 2SK4123LS | 2SK3705 | AP62T02GJ



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