All MOSFET. AP90P03Q Datasheet

 

AP90P03Q Datasheet and Replacement


   Type Designator: AP90P03Q
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 534 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: PDFN3X3-8L
 

 AP90P03Q substitution

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AP90P03Q Datasheet (PDF)

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AP90P03Q

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 ap90p03g.pdf pdf_icon

AP90P03Q

 7.2. Size:1053K  cn apm
 ap90p03nf.pdf pdf_icon

AP90P03Q

AP90P03NF -30V P-Channel Enhancement Mode MOSFET Description The AP90P03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-90A DS DR

 8.1. Size:1731K  cn apm
 ap90p01d.pdf pdf_icon

AP90P03Q

AP90P01D 12V P-Channel Enhancement Mode MOSFET Description The AP90P01D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =12V I =90A DS DR

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Datasheet: AP4822QD , AP4910GD , AP60P20Q , AP68N06G , AP80N04G , AP80N04Q , AP90N03Q , AP90P03G , IRFP460 , APG077N01G , APG095N01G , ASDM30N55E-R , ASDM30N65E-R , ASDM30P11TD-R , ASDM30P30CTD-R , ASDM40N52E-R , AUIRFN8405TR .

History: AP1801GU | AP3D5R0MT

Keywords - AP90P03Q MOSFET datasheet

 AP90P03Q cross reference
 AP90P03Q equivalent finder
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