FDP040N06 Todos los transistores

 

FDP040N06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDP040N06
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 231 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 168 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
   Paquete / Cubierta: TO220
     - Selección de transistores por parámetros

 

FDP040N06 Datasheet (PDF)

 ..1. Size:614K  fairchild semi
fdp040n06.pdf pdf_icon

FDP040N06

November 2009FDP040N06N-Channel PowerTrench MOSFET 60V, 168A, 4.0mFeatures General Description RDS(on) = 3.2m ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has been Fast Switching Speed especially tailored to minimize the on-state resistance and yet maintain superior switching p

 9.1. Size:526K  fairchild semi
fdp047n08.pdf pdf_icon

FDP040N06

March 2008FDP047N08tmN-Channel PowerTrench MOSFET 75V, 164A, 4.7mFeatures Description RDS(on) = 3.8m ( Typ.)@ VGS = 10V, ID = 80A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been espe- Fast switching speedcially tailored to minimize the on-state resistance and yet Low gate chargemaintain super

 9.2. Size:750K  fairchild semi
fdp045n10a f102 fdi045n10a f102.pdf pdf_icon

FDP040N06

July 2011FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench MOSFET 100V, 164A, 4.5mFeatures Description RDS(on) = 3.8m ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductors advance PowerTrench process that has been Fast Switching Speedespecially tailored to minimize the on-state resistance and yet maintain superio

 9.3. Size:536K  fairchild semi
fdp047n10.pdf pdf_icon

FDP040N06

August 2008FDP047N10tmN-Channel PowerTrench MOSFET 100V, 164A, 4.7mDescription General Description RDS(on) = 3.9m ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semicon-ductors advance PowerTrench process that has been especially Fast switching speedtailored to minimize the on-state resistance and yet maintain superior switch

Otros transistores... STM4840 , FDN86246 , FDP025N06 , FDP030N06 , FDP032N08 , FDP036N10A , STM4639 , FDP038AN06A0 , IRF730 , FDP045N10AF102 , STM4637 , FDP047N08 , FDP047N10 , STM4635 , FDP050AN06A0 , FDP054N10 , STM4633 .

History: FDN304P

 

 
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