FDP040N06 PDF and Equivalents Search

 

FDP040N06 PDF Specs and Replacement


   Type Designator: FDP040N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 231 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 168 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO220
 

 FDP040N06 substitution

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FDP040N06 PDF Specs

 ..1. Size:614K  fairchild semi
fdp040n06.pdf pdf_icon

FDP040N06

November 2009 FDP040N06 N-Channel PowerTrench MOSFET 60V, 168A, 4.0m Features General Description RDS(on) = 3.2m ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been Fast Switching Speed especially tailored to minimize the on-state resistance and yet maintain superior switching p... See More ⇒

 9.1. Size:526K  fairchild semi
fdp047n08.pdf pdf_icon

FDP040N06

March 2008 FDP047N08 tm N-Channel PowerTrench MOSFET 75V, 164A, 4.7m Features Description RDS(on) = 3.8m ( Typ.)@ VGS = 10V, ID = 80A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been espe- Fast switching speed cially tailored to minimize the on-state resistance and yet Low gate charge maintain super... See More ⇒

 9.2. Size:750K  fairchild semi
fdp045n10a f102 fdi045n10a f102.pdf pdf_icon

FDP040N06

July 2011 FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench MOSFET 100V, 164A, 4.5m Features Description RDS(on) = 3.8m ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor s advance PowerTrench process that has been Fast Switching Speed especially tailored to minimize the on-state resistance and yet maintain superio... See More ⇒

 9.3. Size:536K  fairchild semi
fdp047n10.pdf pdf_icon

FDP040N06

August 2008 FDP047N10 tm N-Channel PowerTrench MOSFET 100V, 164A, 4.7m Description General Description RDS(on) = 3.9m ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semicon- ductor s advance PowerTrench process that has been especially Fast switching speed tailored to minimize the on-state resistance and yet maintain superior switch... See More ⇒

Detailed specifications: STM4840 , FDN86246 , FDP025N06 , FDP030N06 , FDP032N08 , FDP036N10A , STM4639 , FDP038AN06A0 , 7N60 , FDP045N10AF102 , STM4637 , FDP047N08 , FDP047N10 , STM4635 , FDP050AN06A0 , FDP054N10 , STM4633 .

History: 2SJ543

Keywords - FDP040N06 MOSFET specs

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