November 2009FDP040N06N-Channel PowerTrench MOSFET 60V, 168A, 4.0mFeatures General Description RDS(on) = 3.2m ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has been Fast Switching Speed especially tailored to minimize the on-state resistance and yet maintain superior switching p

March 2008FDP047N08tmN-Channel PowerTrench MOSFET 75V, 164A, 4.7mFeatures Description RDS(on) = 3.8m ( Typ.)@ VGS = 10V, ID = 80A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been espe- Fast switching speedcially tailored to minimize the on-state resistance and yet Low gate chargemaintain super

July 2011FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench MOSFET 100V, 164A, 4.5mFeatures Description RDS(on) = 3.8m ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductors advance PowerTrench process that has been Fast Switching Speedespecially tailored to minimize the on-state resistance and yet maintain superio

August 2008FDP047N10tmN-Channel PowerTrench MOSFET 100V, 164A, 4.7mDescription General Description RDS(on) = 3.9m ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semicon-ductors advance PowerTrench process that has been especially Fast switching speedtailored to minimize the on-state resistance and yet maintain superior switch

November 2013FDP045N10A / FDI045N10AN-Channel PowerTrench MOSFET100 V, 164 A, 4.5 mFeatures Description RDS(on) = 3.8 m ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using FairchildSemiconductors advance PowerTrench process that has Fast Switching Speedbeen tailored to minimize the on-state resistance while main-taining superior switching

November 2013FDP045N10A / FDI045N10AN-Channel PowerTrench MOSFET100 V, 164 A, 4.5 mFeatures Description RDS(on) = 3.8 m ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using FairchildSemiconductors advance PowerTrench process that has Fast Switching Speedbeen tailored to minimize the on-state resistance while main-taining superior switching

October 2013FDP047AN08A0 / FDH047AN08A0N-Channel PowerTrench MOSFET75 V, 80 A, 4.7 mApplicationsFeatures RDS(ON) = 4.0 m (Typ.), VGS = 10 V, ID = 80 A Synchronous Rectification for ATX / Server / Telecom PSU Qg(tot) = 92 nC (Typ.), VGS = 10V Battery Protection Circuit Low Miller Charge Motor Drives and Uninterruptible Power Supplies Low Qrr Body

June 2004FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0N-Channel PowerTrench MOSFET75V, 80A, 4.7mFeatures Applications rDS(ON) = 4.0m (Typ.), VGS = 10V, ID = 80A 42V Automotive Load Control Qg(tot) = 92nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low QRR Body Diode Electronic Valve Train Sys

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

isc N-Channel MOSFET Transistor FDP047N08FEATURESWith TO-220 packagingDrain Source Voltage-: V 75VDSSStatic drain-source on-resistance:RDS(on) 4.7m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

isc N-Channel MOSFET Transistor FDP047N10FEATURESWith TO-220 packagingDrain Source Voltage-: V 100VDSSStatic drain-source on-resistance:RDS(on) 4.7m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25