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HSBB6113 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HSBB6113
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 20 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 13 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 19.6 nS
   Cossⓘ - Capacitancia de salida: 73 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm
   Paquete / Cubierta: PRPAK3X3
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HSBB6113 Datasheet (PDF)

 ..1. Size:498K  1
hsbb6113.pdf pdf_icon

HSBB6113

HSBB6113 P-Ch 60V Fast Switching MOSFETs Description Product Summary The HSBB6113 is the high cell density trenched P-V -60 V DSch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 90 m DS(ON),maxconverter applications. I -13 A DThe HSBB6113 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full funct

 7.1. Size:472K  1
hsbb6115.pdf pdf_icon

HSBB6113

HSBB6115 P-Ch 60V Fast Switching MOSFETs Description Product Summary VDS -60 V The HSBB6115 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 20 m gate charge for most of the synchronous buck converter applications. ID -26 A The HSBB6115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function re

 7.2. Size:472K  huashuo
hsbb6115.pdf pdf_icon

HSBB6113

HSBB6115 P-Ch 60V Fast Switching MOSFETs Description Product Summary VDS -60 V The HSBB6115 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 20 m gate charge for most of the synchronous buck converter applications. ID -26 A The HSBB6115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function re

 9.1. Size:785K  1
hsbb6056.pdf pdf_icon

HSBB6113

HSBB6056 N-Ch 60V Fast Switching MOSFETs Description Product Summary Advanced Trench MOS Technology VDS 60 V Low Gate Charge Low RDS(ON) RDS(ON),typ 7 m 100% EAS Guaranteed ID 30 A Green Device Available PRPAK3X3 Pin Configuration Application Motor Control. DC/DC Converter. Synchronous rectifier applications. Absolute Maximum R

Otros transistores... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: IXTP50N28T | 3SK249

 

 
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