HSBB6113
MOSFET. Datasheet pdf. Equivalent
Type Designator: HSBB6113
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 20
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 13
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 11.8
nC
trⓘ - Rise Time: 19.6
nS
Cossⓘ -
Output Capacitance: 73
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09
Ohm
Package: PRPAK3X3
HSBB6113
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HSBB6113
Datasheet (PDF)
..1. Size:498K 1
hsbb6113.pdf 
HSBB6113 P-Ch 60V Fast Switching MOSFETs Description Product Summary The HSBB6113 is the high cell density trenched P-V -60 V DSch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 90 m DS(ON),maxconverter applications. I -13 A DThe HSBB6113 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full funct
7.1. Size:472K 1
hsbb6115.pdf
HSBB6115 P-Ch 60V Fast Switching MOSFETs Description Product Summary VDS -60 V The HSBB6115 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 20 m gate charge for most of the synchronous buck converter applications. ID -26 A The HSBB6115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function re
7.2. Size:472K huashuo
hsbb6115.pdf
HSBB6115 P-Ch 60V Fast Switching MOSFETs Description Product Summary VDS -60 V The HSBB6115 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 20 m gate charge for most of the synchronous buck converter applications. ID -26 A The HSBB6115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function re
9.1. Size:785K 1
hsbb6056.pdf
HSBB6056 N-Ch 60V Fast Switching MOSFETs Description Product Summary Advanced Trench MOS Technology VDS 60 V Low Gate Charge Low RDS(ON) RDS(ON),typ 7 m 100% EAS Guaranteed ID 30 A Green Device Available PRPAK3X3 Pin Configuration Application Motor Control. DC/DC Converter. Synchronous rectifier applications. Absolute Maximum R
9.2. Size:553K 1
hsbb6254.pdf
HSBB6254 Dual N-Ch 60V Fast Switching MOSFETs Product Summary Applications V 60 V DS Load Switching Battery Protection. R 15 m DS(ON),max Lighting. Bridge Topologies. I 22 A DPRPAK3*3 Pin Configuration 100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell densi
9.3. Size:848K 1
hsbb6066.pdf
HSBB6066 N-Ch 60V Fast Switching MOSFETs Description Product Summary Advanced Trench MOS Technology V 60 V DS Low Gate Charge Low R DS(ON)R 4.4 m DS(ON),typ 100% EAS Guaranteed I 60 A D Green Device Available PRPAK3X3 Pin Configuration Application Motor Control. DC/DC Converter. Synchronous rectifier applications. Absolute
9.4. Size:785K huashuo
hsbb6056.pdf
HSBB6056 N-Ch 60V Fast Switching MOSFETs Description Product Summary Advanced Trench MOS Technology VDS 60 V Low Gate Charge Low RDS(ON) RDS(ON),typ 7 m 100% EAS Guaranteed ID 30 A Green Device Available PRPAK3X3 Pin Configuration Application Motor Control. DC/DC Converter. Synchronous rectifier applications. Absolute Maximum R
9.5. Size:848K huashuo
hsbb6066.pdf
HSBB6066 N-Ch 60V Fast Switching MOSFETs Description Product Summary Advanced Trench MOS Technology V 60 V DS Low Gate Charge Low R DS(ON)R 4.4 m DS(ON),typ 100% EAS Guaranteed I 60 A D Green Device Available PRPAK3X3 Pin Configuration Application Motor Control. DC/DC Converter. Synchronous rectifier applications. Absolute
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