FDP085N10AF102 Todos los transistores

 

FDP085N10AF102 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDP085N10AF102
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 188 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 68 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Qgⓘ - Carga de la puerta: 31 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0085 Ohm
   Paquete / Cubierta: TO220
 

 Búsqueda de reemplazo de FDP085N10AF102 MOSFET

   - Selección ⓘ de transistores por parámetros

 

FDP085N10AF102 Datasheet (PDF)

 4.1. Size:662K  fairchild semi
 fdp085n10a.pdf pdf_icon

FDP085N10AF102

November 2013FDP085N10AN-Channel PowerTrench MOSFET100 V, 96 A, 8.5 mFeatures Description RDS(on) = 7.35 m (Typ.) @ VGS = 10 V, ID = 96 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors PowerTrench process that has been tailored to mini- Fast Switching Speedmize the on-state resistance while maintaining superiorswitching performance. Low

 4.2. Size:320K  fairchild semi
 fdp085n10a f102.pdf pdf_icon

FDP085N10AF102

May 2011FDP085N10A_F102N-Channel PowerTrench MOSFET 100V, 96A, 8.5mFeatures General Description RDS(on) = 7.35m ( Typ.)@ VGS = 10V, ID = 96A This N-Channel MOSFET is produced using FairchildSemiconductors advance PowerTrench process that has been Fast Switching Speedespecially tailored to minimize the on-state resistance and yet maintain superior switching perf

 4.3. Size:4025K  onsemi
 fdp085n10a.pdf pdf_icon

FDP085N10AF102

FDP085N10AN-Channel PowerTrench MOSFET100 V, 96 A, 8.5 mFeatures DescriptionThis N-Channel MOSFET is produced using ON Semiconductor's RDS(on) = 7.35 m (Typ.) @ VGS = 10 V, ID = 96 APowerTrench process that has been tailored to minimize the Fast Switching Speedon-state resistance while maintaining superior switching performance. Low Gate Charge, QG = 31 nC

 4.4. Size:246K  inchange semiconductor
 fdp085n10a.pdf pdf_icon

FDP085N10AF102

isc N-Channel MOSFET Transistor FDP085N10AFEATURESStatic drain-source on-resistance:RDS(on) 8.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDC to DC converterssynchronous rectification for telecommunication PSUAC motor drives and uninterruptib

MOSTRAR MÁS

Otros transistores... FDP047N10 , STM4635 , FDP050AN06A0 , FDP054N10 , STM4633 , FDP060AN08A0 , FDP075N15AF102 , FDP083N15AF102 , HY1906P , STM4615 , FDP090N10 , STM4605 , FDP100N10 , STM4550 , FDP10N60NZ , STM4532 , FDP120N10 .

 

 
Back to Top

 


 
.