FDP085N10AF102 datasheet, аналоги, основные параметры

Наименование производителя: FDP085N10AF102  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 188 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 68 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0085 Ohm

Тип корпуса: TO220

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Аналог (замена) для FDP085N10AF102

- подборⓘ MOSFET транзистора по параметрам

 

FDP085N10AF102 даташит

 4.1. Size:662K  fairchild semi
 fdp085n10a.pdf pdf_icon

FDP085N10AF102

November 2013 FDP085N10A N-Channel PowerTrench MOSFET 100 V, 96 A, 8.5 m Features Description RDS(on) = 7.35 m (Typ.) @ VGS = 10 V, ID = 96 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s PowerTrench process that has been tailored to mini- Fast Switching Speed mize the on-state resistance while maintaining superior switching performance. Low

 4.2. Size:320K  fairchild semi
 fdp085n10a f102.pdf pdf_icon

FDP085N10AF102

May 2011 FDP085N10A_F102 N-Channel PowerTrench MOSFET 100V, 96A, 8.5m Features General Description RDS(on) = 7.35m ( Typ.)@ VGS = 10V, ID = 96A This N-Channel MOSFET is produced using Fairchild Semiconductor s advance PowerTrench process that has been Fast Switching Speed especially tailored to minimize the on-state resistance and yet maintain superior switching perf

 4.3. Size:4025K  onsemi
 fdp085n10a.pdf pdf_icon

FDP085N10AF102

FDP085N10A N-Channel PowerTrench MOSFET 100 V, 96 A, 8.5 m Features Description This N-Channel MOSFET is produced using ON Semiconductor's RDS(on) = 7.35 m (Typ.) @ VGS = 10 V, ID = 96 A PowerTrench process that has been tailored to minimize the Fast Switching Speed on-state resistance while maintaining superior switching performance. Low Gate Charge, QG = 31 nC

 4.4. Size:246K  inchange semiconductor
 fdp085n10a.pdf pdf_icon

FDP085N10AF102

isc N-Channel MOSFET Transistor FDP085N10A FEATURES Static drain-source on-resistance RDS(on) 8.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION DC to DC converters synchronous rectification for telecommunication PSU AC motor drives and uninterruptib

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