Справочник MOSFET. FDP085N10AF102

 

FDP085N10AF102 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDP085N10AF102
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 188 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 68 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 31 nC
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0085 Ohm
   Тип корпуса: TO220

 Аналог (замена) для FDP085N10AF102

 

 

FDP085N10AF102 Datasheet (PDF)

 4.1. Size:662K  fairchild semi
 fdp085n10a.pdf

FDP085N10AF102 FDP085N10AF102

November 2013FDP085N10AN-Channel PowerTrench MOSFET100 V, 96 A, 8.5 mFeatures Description RDS(on) = 7.35 m (Typ.) @ VGS = 10 V, ID = 96 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors PowerTrench process that has been tailored to mini- Fast Switching Speedmize the on-state resistance while maintaining superiorswitching performance. Low

 4.2. Size:320K  fairchild semi
 fdp085n10a f102.pdf

FDP085N10AF102 FDP085N10AF102

May 2011FDP085N10A_F102N-Channel PowerTrench MOSFET 100V, 96A, 8.5mFeatures General Description RDS(on) = 7.35m ( Typ.)@ VGS = 10V, ID = 96A This N-Channel MOSFET is produced using FairchildSemiconductors advance PowerTrench process that has been Fast Switching Speedespecially tailored to minimize the on-state resistance and yet maintain superior switching perf

 4.3. Size:4025K  onsemi
 fdp085n10a.pdf

FDP085N10AF102 FDP085N10AF102

FDP085N10AN-Channel PowerTrench MOSFET100 V, 96 A, 8.5 mFeatures DescriptionThis N-Channel MOSFET is produced using ON Semiconductor's RDS(on) = 7.35 m (Typ.) @ VGS = 10 V, ID = 96 APowerTrench process that has been tailored to minimize the Fast Switching Speedon-state resistance while maintaining superior switching performance. Low Gate Charge, QG = 31 nC

 4.4. Size:246K  inchange semiconductor
 fdp085n10a.pdf

FDP085N10AF102 FDP085N10AF102

isc N-Channel MOSFET Transistor FDP085N10AFEATURESStatic drain-source on-resistance:RDS(on) 8.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDC to DC converterssynchronous rectification for telecommunication PSUAC motor drives and uninterruptib

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