All MOSFET. FDP085N10AF102 Datasheet

 

FDP085N10AF102 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDP085N10AF102
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 188 W
   Maximum Drain-Source Voltage |Vds|: 100 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Drain Current |Id|: 68 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 31 nC
   Maximum Drain-Source On-State Resistance (Rds): 0.0085 Ohm
   Package: TO220

 FDP085N10AF102 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDP085N10AF102 Datasheet (PDF)

 4.1. Size:662K  fairchild semi
 fdp085n10a.pdf

FDP085N10AF102 FDP085N10AF102

November 2013FDP085N10AN-Channel PowerTrench MOSFET100 V, 96 A, 8.5 mFeatures Description RDS(on) = 7.35 m (Typ.) @ VGS = 10 V, ID = 96 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors PowerTrench process that has been tailored to mini- Fast Switching Speedmize the on-state resistance while maintaining superiorswitching performance. Low

 4.2. Size:320K  fairchild semi
 fdp085n10a f102.pdf

FDP085N10AF102 FDP085N10AF102

May 2011FDP085N10A_F102N-Channel PowerTrench MOSFET 100V, 96A, 8.5mFeatures General Description RDS(on) = 7.35m ( Typ.)@ VGS = 10V, ID = 96A This N-Channel MOSFET is produced using FairchildSemiconductors advance PowerTrench process that has been Fast Switching Speedespecially tailored to minimize the on-state resistance and yet maintain superior switching perf

 4.3. Size:4025K  onsemi
 fdp085n10a.pdf

FDP085N10AF102 FDP085N10AF102

FDP085N10AN-Channel PowerTrench MOSFET100 V, 96 A, 8.5 mFeatures DescriptionThis N-Channel MOSFET is produced using ON Semiconductor's RDS(on) = 7.35 m (Typ.) @ VGS = 10 V, ID = 96 APowerTrench process that has been tailored to minimize the Fast Switching Speedon-state resistance while maintaining superior switching performance. Low Gate Charge, QG = 31 nC

 4.4. Size:246K  inchange semiconductor
 fdp085n10a.pdf

FDP085N10AF102 FDP085N10AF102

isc N-Channel MOSFET Transistor FDP085N10AFEATURESStatic drain-source on-resistance:RDS(on) 8.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDC to DC converterssynchronous rectification for telecommunication PSUAC motor drives and uninterruptib

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP450 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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