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ME7170 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ME7170
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 56 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 110 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 51 nS
   Cossⓘ - Capacitancia de salida: 487 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0026 Ohm
   Paquete / Cubierta: POWERDFN5X6
 

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ME7170 Datasheet (PDF)

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ME7170

ME7170-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7170-G is the N-Channel logic enhancement mode power RDS(ON)2.6m@VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)3.9m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely lo

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ME7170

ME7170-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7170-G is the N-Channel logic enhancement mode power RDS(ON)2.6m@VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)3.9m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely lo

 0.2. Size:1344K  matsuki electric
 me7170-g.pdf pdf_icon

ME7170

ME7170-G N-Channel 30V(D-S) Enhancement MOSFETGENERAL DESCRIPTION FEATURES The ME7170-G is the N-Channel logic enhancement mode power RDS(ON)2.6m@VGS=10Vfield effect transistors are produced using high cell density , DMOS RDS(ON)3.9m@VGS=4.5Vtrench technology. This high density process is especially tailored to Super high density cell design for extremely low R

Otros transistores... MCAC50N06Y-TP , MCAC50N10Y-TP , MCAC60N08Y-TP , MCAC75N02-TP , MCAC80N045Y-TP , MCG10P03-TP , MCG30N03-TP , ME7114S , IRF9540N , MEE7816S , MSJAC11N65Y-TP , MSK100N03DF , MSK20P80GNF , MSK30N03DF , MSK30P02DF , MSK3419DF , MSK50N03DF .

History: MCG10P03-TP | FDD3672_F085 | CJPF10N65

 

 
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