ME7170
MOSFET. Datasheet pdf. Equivalent
Type Designator: ME7170
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 56
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2
V
|Id|ⓘ - Maximum Drain Current: 110
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 86
nC
trⓘ - Rise Time: 51
nS
Cossⓘ -
Output Capacitance: 487
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0026
Ohm
Package: POWERDFN5X6
ME7170
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME7170
Datasheet (PDF)
..1. Size:1344K 1
me7170.pdf 
ME7170-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7170-G is the N-Channel logic enhancement mode power RDS(ON)2.6m@VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)3.9m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely lo
0.1. Size:1416K 1
me7170-g.pdf
ME7170-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7170-G is the N-Channel logic enhancement mode power RDS(ON)2.6m@VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)3.9m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely lo
0.2. Size:1344K matsuki electric
me7170-g.pdf
ME7170-G N-Channel 30V(D-S) Enhancement MOSFETGENERAL DESCRIPTION FEATURES The ME7170-G is the N-Channel logic enhancement mode power RDS(ON)2.6m@VGS=10Vfield effect transistors are produced using high cell density , DMOS RDS(ON)3.9m@VGS=4.5Vtrench technology. This high density process is especially tailored to Super high density cell design for extremely low R
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