ME7170 PDF and Equivalents Search

 

ME7170 Specs and Replacement

Type Designator: ME7170

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 51 nS

Cossⓘ - Output Capacitance: 487 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm

Package: POWERDFN5X6

ME7170 substitution

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ME7170 datasheet

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ME7170

ME7170-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7170-G is the N-Channel logic enhancement mode power RDS(ON) 2.6m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON) 3.9m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely lo... See More ⇒

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ME7170

ME7170-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7170-G is the N-Channel logic enhancement mode power RDS(ON) 2.6m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON) 3.9m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely lo... See More ⇒

 0.2. Size:1344K  matsuki electric
 me7170-g.pdf pdf_icon

ME7170

ME7170-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7170-G is the N-Channel logic enhancement mode power RDS(ON) 2.6m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON) 3.9m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low R... See More ⇒

Detailed specifications: MCAC50N06Y-TP, MCAC50N10Y-TP, MCAC60N08Y-TP, MCAC75N02-TP, MCAC80N045Y-TP, MCG10P03-TP, MCG30N03-TP, ME7114S, SKD502T, MEE7816S, MSJAC11N65Y-TP, MSK100N03DF, MSK20P80GNF, MSK30N03DF, MSK30P02DF, MSK3419DF, MSK50N03DF

Keywords - ME7170 MOSFET specs

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