NTMFS0D8N02P1ET1G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMFS0D8N02P1ET1G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 139 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V
|Id|ⓘ - Corriente continua de drenaje: 365 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 24 nS
Cossⓘ - Capacitancia de salida: 2285 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.00068 Ohm
Encapsulados: SO8
Búsqueda de reemplazo de NTMFS0D8N02P1ET1G MOSFET
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NTMFS0D8N02P1ET1G datasheet
ntmfs0d8n02p1e.pdf
MOSFET - Power, Single N-Channel, SO8-FL 25 V, 0.68 mW, 365 A NTMFS0D8N02P1E Features Small Footprint (5x6mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 0.68 mW @ 10 V 25 V 365 A Applic
ntmfs0d8n02p1et1g.pdf
MOSFET - Power, Single N-Channel, SO8-FL 25 V, 0.68 mW, 365 A NTMFS0D8N02P1E Features Small Footprint (5x6mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 0.68 mW @ 10 V 25 V 365 A Applic
ntmfs0d9n03cgt1g.pdf
MOSFET - Power, Single N-Channel, SO8-FL 30 V, 0.9 mW, 298 A NTMFS0D9N03CG Features www.onsemi.com Advanced Package (5x6mm) with Excellent Thermal Conduction Ultra Low RDS(on) to Improve System Efficiency These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 30 V 0.9 mW @ 10 V 298 A Applications Hot Swap Application D (
ntmfs0d55n03cg.pdf
MOSFET - Power, Single N-Channel, SO8-FL 30 V, 0.58 mW, 462 A NTMFS0D55N03CG Features Wide SOA to Improve Inrush Current Management www.onsemi.com Advanced Package (5x6mm) with Excellent Thermal Conduction Ultra Low RDS(on) to Improve System Efficiency V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 30 V 0.58 mW @ 1
Otros transistores... NTMFD5C470NLT1G , NTMFD5C650NLT1G , NTMFD5C674NLT1G , NTMFD6H840NLT1G , NTMFD6H846NLT1G , NTMFS006N12MCT1G , NTMFS008N12MCT1G , NTMFS015N10MCLT1G , RFP50N06 , NTMFS0D9N03CGT1G , NTMFS1D15N03CGT1G , NTMFS1D7N03CGT1G , NTMFS23D9N06HLT1G , NTMFS3D6N10MCLT1G , NTMFS4C05NT1G , NTMFS4D2N10MDT1G , NTMFS5C404NLTT1G .
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