Справочник MOSFET. NTMFS0D8N02P1ET1G

 

NTMFS0D8N02P1ET1G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NTMFS0D8N02P1ET1G
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 139 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 365 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 24 ns
   Cossⓘ - Выходная емкость: 2285 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.00068 Ohm
   Тип корпуса: SO8

 Аналог (замена) для NTMFS0D8N02P1ET1G

 

 

NTMFS0D8N02P1ET1G Datasheet (PDF)

 ..1. Size:187K  onsemi
 ntmfs0d8n02p1e.pdf

NTMFS0D8N02P1ET1G NTMFS0D8N02P1ET1G

MOSFET - Power, SingleN-Channel, SO8-FL25 V, 0.68 mW, 365 ANTMFS0D8N02P1EFeatures Small Footprint (5x6mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant0.68 mW @ 10 V25 V 365 AApplic

 0.1. Size:187K  1
 ntmfs0d8n02p1et1g.pdf

NTMFS0D8N02P1ET1G NTMFS0D8N02P1ET1G

MOSFET - Power, SingleN-Channel, SO8-FL25 V, 0.68 mW, 365 ANTMFS0D8N02P1EFeatures Small Footprint (5x6mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant0.68 mW @ 10 V25 V 365 AApplic

 7.1. Size:176K  1
 ntmfs0d9n03cgt1g.pdf

NTMFS0D8N02P1ET1G NTMFS0D8N02P1ET1G

MOSFET - Power, SingleN-Channel, SO8-FL30 V, 0.9 mW, 298 ANTMFS0D9N03CGFeatureswww.onsemi.com Advanced Package (5x6mm) with Excellent Thermal Conduction Ultra Low RDS(on) to Improve System Efficiency These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant30 V 0.9 mW @ 10 V 298 AApplications Hot Swap ApplicationD (

 7.2. Size:169K  onsemi
 ntmfs0d55n03cg.pdf

NTMFS0D8N02P1ET1G NTMFS0D8N02P1ET1G

MOSFET - Power, SingleN-Channel, SO8-FL30 V, 0.58 mW, 462 ANTMFS0D55N03CGFeatures Wide SOA to Improve Inrush Current Managementwww.onsemi.com Advanced Package (5x6mm) with Excellent Thermal Conduction Ultra Low RDS(on) to Improve System EfficiencyV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant30 V 0.58 mW @ 1

 7.3. Size:176K  onsemi
 ntmfs0d9n03cg.pdf

NTMFS0D8N02P1ET1G NTMFS0D8N02P1ET1G

MOSFET - Power, SingleN-Channel, SO8-FL30 V, 0.9 mW, 298 ANTMFS0D9N03CGFeatureswww.onsemi.com Advanced Package (5x6mm) with Excellent Thermal Conduction Ultra Low RDS(on) to Improve System Efficiency These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant30 V 0.9 mW @ 10 V 298 AApplications Hot Swap ApplicationD (

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