NTMFS0D8N02P1ET1G - описание и поиск аналогов

 

Аналоги NTMFS0D8N02P1ET1G. Основные параметры


   Наименование производителя: NTMFS0D8N02P1ET1G
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 139 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 365 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 24 ns
   Cossⓘ - Выходная емкость: 2285 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.00068 Ohm
   Тип корпуса: SO8
 

 Аналог (замена) для NTMFS0D8N02P1ET1G

   - подбор ⓘ MOSFET транзистора по параметрам

 

NTMFS0D8N02P1ET1G даташит

 ..1. Size:187K  onsemi
ntmfs0d8n02p1e.pdfpdf_icon

NTMFS0D8N02P1ET1G

MOSFET - Power, Single N-Channel, SO8-FL 25 V, 0.68 mW, 365 A NTMFS0D8N02P1E Features Small Footprint (5x6mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 0.68 mW @ 10 V 25 V 365 A Applic

 0.1. Size:187K  1
ntmfs0d8n02p1et1g.pdfpdf_icon

NTMFS0D8N02P1ET1G

MOSFET - Power, Single N-Channel, SO8-FL 25 V, 0.68 mW, 365 A NTMFS0D8N02P1E Features Small Footprint (5x6mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 0.68 mW @ 10 V 25 V 365 A Applic

 7.1. Size:176K  1
ntmfs0d9n03cgt1g.pdfpdf_icon

NTMFS0D8N02P1ET1G

MOSFET - Power, Single N-Channel, SO8-FL 30 V, 0.9 mW, 298 A NTMFS0D9N03CG Features www.onsemi.com Advanced Package (5x6mm) with Excellent Thermal Conduction Ultra Low RDS(on) to Improve System Efficiency These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 30 V 0.9 mW @ 10 V 298 A Applications Hot Swap Application D (

 7.2. Size:169K  onsemi
ntmfs0d55n03cg.pdfpdf_icon

NTMFS0D8N02P1ET1G

MOSFET - Power, Single N-Channel, SO8-FL 30 V, 0.58 mW, 462 A NTMFS0D55N03CG Features Wide SOA to Improve Inrush Current Management www.onsemi.com Advanced Package (5x6mm) with Excellent Thermal Conduction Ultra Low RDS(on) to Improve System Efficiency V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 30 V 0.58 mW @ 1

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History: SI7137DP | SSF3341L | 5N65L-TF3T-T | HGB155N15S | IRFP432 | P0260EIS | NCE01P13K

 

 
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