NTMFS0D8N02P1ET1G PDF and Equivalents Search

 

NTMFS0D8N02P1ET1G Specs and Replacement

Type Designator: NTMFS0D8N02P1ET1G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 139 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 365 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 2285 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00068 Ohm

Package: SO8

NTMFS0D8N02P1ET1G substitution

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NTMFS0D8N02P1ET1G datasheet

 ..1. Size:187K  onsemi
 ntmfs0d8n02p1e.pdf pdf_icon

NTMFS0D8N02P1ET1G

MOSFET - Power, Single N-Channel, SO8-FL 25 V, 0.68 mW, 365 A NTMFS0D8N02P1E Features Small Footprint (5x6mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 0.68 mW @ 10 V 25 V 365 A Applic... See More ⇒

 0.1. Size:187K  1
 ntmfs0d8n02p1et1g.pdf pdf_icon

NTMFS0D8N02P1ET1G

MOSFET - Power, Single N-Channel, SO8-FL 25 V, 0.68 mW, 365 A NTMFS0D8N02P1E Features Small Footprint (5x6mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 0.68 mW @ 10 V 25 V 365 A Applic... See More ⇒

 7.1. Size:176K  1
 ntmfs0d9n03cgt1g.pdf pdf_icon

NTMFS0D8N02P1ET1G

MOSFET - Power, Single N-Channel, SO8-FL 30 V, 0.9 mW, 298 A NTMFS0D9N03CG Features www.onsemi.com Advanced Package (5x6mm) with Excellent Thermal Conduction Ultra Low RDS(on) to Improve System Efficiency These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 30 V 0.9 mW @ 10 V 298 A Applications Hot Swap Application D (... See More ⇒

 7.2. Size:169K  onsemi
 ntmfs0d55n03cg.pdf pdf_icon

NTMFS0D8N02P1ET1G

MOSFET - Power, Single N-Channel, SO8-FL 30 V, 0.58 mW, 462 A NTMFS0D55N03CG Features Wide SOA to Improve Inrush Current Management www.onsemi.com Advanced Package (5x6mm) with Excellent Thermal Conduction Ultra Low RDS(on) to Improve System Efficiency V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 30 V 0.58 mW @ 1... See More ⇒

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Detailed specifications: NTMFD5C470NLT1G, NTMFD5C650NLT1G, NTMFD5C674NLT1G, NTMFD6H840NLT1G, NTMFD6H846NLT1G, NTMFS006N12MCT1G, NTMFS008N12MCT1G, NTMFS015N10MCLT1G, RFP50N06, NTMFS0D9N03CGT1G, NTMFS1D15N03CGT1G, NTMFS1D7N03CGT1G, NTMFS23D9N06HLT1G, NTMFS3D6N10MCLT1G, NTMFS4C05NT1G, NTMFS4D2N10MDT1G, NTMFS5C404NLTT1G

Keywords - NTMFS0D8N02P1ET1G MOSFET specs

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