NTMFS5C406NLT1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMFS5C406NLT1G
Código: 5C406L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 179 W
Voltaje máximo drenador - fuente |Vds|: 40 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 362 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
Carga de la puerta (Qg): 149 nC
Tiempo de subida (tr): 47 nS
Conductancia de drenaje-sustrato (Cd): 4600 pF
Resistencia entre drenaje y fuente RDS(on): 0.0007 Ohm
Paquete / Cubierta: DFN5
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NTMFS5C406NLT1G Datasheet (PDF)
ntmfs5c406nlt1g.pdf
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NTMFS5C406NLMOSFET Power, Single,N-Channel40 V, 0.7 mW, 362 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant0.7 mW @ 10 V40 V 362 AMAXIMUM RATINGS (TJ = 25C unless oth
ntmfs5c406nl.pdf
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NTMFS5C406NLMOSFET Power, Single,N-Channel40 V, 0.7 mW, 362 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant0.7 mW @ 10 V40 V 362 AMAXIMUM RATINGS (TJ = 25C unless oth
ntmfs5c406nt1g.pdf
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NTMFS5C406NPower MOSFET40 V, 0.8 mW, 353 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)40 V 0.8 mW @ 10 V
ntmfs5c406n.pdf
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NTMFS5C406NPower MOSFET40 V, 0.8 mW, 353 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)40 V 0.8 mW @ 10 V
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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Liste
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