NTMFS5C406NLT1G PDF and Equivalents Search

 

NTMFS5C406NLT1G Specs and Replacement


   Type Designator: NTMFS5C406NLT1G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 179 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 362 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 47 nS
   Cossⓘ - Output Capacitance: 4600 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0007 Ohm
   Package: DFN5
 

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NTMFS5C406NLT1G datasheet

 0.1. Size:159K  1
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NTMFS5C406NLT1G

NTMFS5C406NL MOSFET Power, Single, N-Channel 40 V, 0.7 mW, 362 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 0.7 mW @ 10 V 40 V 362 A MAXIMUM RATINGS (TJ = 25 C unless oth... See More ⇒

 2.1. Size:159K  onsemi
ntmfs5c406nl.pdf pdf_icon

NTMFS5C406NLT1G

NTMFS5C406NL MOSFET Power, Single, N-Channel 40 V, 0.7 mW, 362 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 0.7 mW @ 10 V 40 V 362 A MAXIMUM RATINGS (TJ = 25 C unless oth... See More ⇒

 3.1. Size:121K  1
ntmfs5c406nt1g.pdf pdf_icon

NTMFS5C406NLT1G

NTMFS5C406N Power MOSFET 40 V, 0.8 mW, 353 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 40 V 0.8 mW @ 10 V ... See More ⇒

 3.2. Size:121K  onsemi
ntmfs5c406n.pdf pdf_icon

NTMFS5C406NLT1G

NTMFS5C406N Power MOSFET 40 V, 0.8 mW, 353 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 40 V 0.8 mW @ 10 V ... See More ⇒

Detailed specifications: NTMFS1D15N03CGT1G , NTMFS1D7N03CGT1G , NTMFS23D9N06HLT1G , NTMFS3D6N10MCLT1G , NTMFS4C05NT1G , NTMFS4D2N10MDT1G , NTMFS5C404NLTT1G , NTMFS5C404NT3G , 8N60 , NTMFS5C406NT1G , NTMFS5C410NT3G , NTMFS5C423NLT1G , NTMFS5C426NLT1G , NTMFS5C426NT1G , NTMFS5C430NLT1G , NTMFS5C430NLT3G , NTMFS5C442NLT1G .

Keywords - NTMFS5C406NLT1G MOSFET specs

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