All MOSFET. NTMFS5C406NLT1G Datasheet

 

NTMFS5C406NLT1G Datasheet and Replacement


   Type Designator: NTMFS5C406NLT1G
   Marking Code: 5C406L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 179 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id| ⓘ - Maximum Drain Current: 362 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 149 nC
   tr ⓘ - Rise Time: 47 nS
   Cossⓘ - Output Capacitance: 4600 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0007 Ohm
   Package: DFN5
 

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NTMFS5C406NLT1G Datasheet (PDF)

 0.1. Size:159K  1
 ntmfs5c406nlt1g.pdf pdf_icon

NTMFS5C406NLT1G

NTMFS5C406NLMOSFET Power, Single,N-Channel40 V, 0.7 mW, 362 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant0.7 mW @ 10 V40 V 362 AMAXIMUM RATINGS (TJ = 25C unless oth

 2.1. Size:159K  onsemi
 ntmfs5c406nl.pdf pdf_icon

NTMFS5C406NLT1G

NTMFS5C406NLMOSFET Power, Single,N-Channel40 V, 0.7 mW, 362 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant0.7 mW @ 10 V40 V 362 AMAXIMUM RATINGS (TJ = 25C unless oth

 3.1. Size:121K  1
 ntmfs5c406nt1g.pdf pdf_icon

NTMFS5C406NLT1G

NTMFS5C406NPower MOSFET40 V, 0.8 mW, 353 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)40 V 0.8 mW @ 10 V

 3.2. Size:121K  onsemi
 ntmfs5c406n.pdf pdf_icon

NTMFS5C406NLT1G

NTMFS5C406NPower MOSFET40 V, 0.8 mW, 353 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)40 V 0.8 mW @ 10 V

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History: AOC2800 | VBZM40N03 | TMU3N50Z | TK5A65W | 50N06AF | HSS0008

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