NTMFS5C406NT1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMFS5C406NT1G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 179 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 353 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 116 nS
Cossⓘ - Capacitancia de salida: 4530 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0008 Ohm
Paquete / Cubierta: DFN5
- Selección de transistores por parámetros
NTMFS5C406NT1G Datasheet (PDF)
ntmfs5c406nt1g.pdf

NTMFS5C406NPower MOSFET40 V, 0.8 mW, 353 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)40 V 0.8 mW @ 10 V
ntmfs5c406nlt1g.pdf

NTMFS5C406NLMOSFET Power, Single,N-Channel40 V, 0.7 mW, 362 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant0.7 mW @ 10 V40 V 362 AMAXIMUM RATINGS (TJ = 25C unless oth
ntmfs5c406n.pdf

NTMFS5C406NPower MOSFET40 V, 0.8 mW, 353 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)40 V 0.8 mW @ 10 V
ntmfs5c406nl.pdf

NTMFS5C406NLMOSFET Power, Single,N-Channel40 V, 0.7 mW, 362 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant0.7 mW @ 10 V40 V 362 AMAXIMUM RATINGS (TJ = 25C unless oth
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: VBZE50P03 | FCH20N60 | NCE65N260F | IPB60R190C6
History: VBZE50P03 | FCH20N60 | NCE65N260F | IPB60R190C6



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