NTMFS5C406NT1G. Аналоги и основные параметры
Наименование производителя: NTMFS5C406NT1G
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 179 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 353 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 116 ns
Cossⓘ - Выходная емкость: 4530 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0008 Ohm
Тип корпуса: DFN5
Аналог (замена) для NTMFS5C406NT1G
- подборⓘ MOSFET транзистора по параметрам
NTMFS5C406NT1G даташит
ntmfs5c406nt1g.pdf
NTMFS5C406N Power MOSFET 40 V, 0.8 mW, 353 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 40 V 0.8 mW @ 10 V
ntmfs5c406nlt1g.pdf
NTMFS5C406NL MOSFET Power, Single, N-Channel 40 V, 0.7 mW, 362 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 0.7 mW @ 10 V 40 V 362 A MAXIMUM RATINGS (TJ = 25 C unless oth
ntmfs5c406n.pdf
NTMFS5C406N Power MOSFET 40 V, 0.8 mW, 353 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 40 V 0.8 mW @ 10 V
ntmfs5c406nl.pdf
NTMFS5C406NL MOSFET Power, Single, N-Channel 40 V, 0.7 mW, 362 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 0.7 mW @ 10 V 40 V 362 A MAXIMUM RATINGS (TJ = 25 C unless oth
Другие MOSFET... NTMFS1D7N03CGT1G , NTMFS23D9N06HLT1G , NTMFS3D6N10MCLT1G , NTMFS4C05NT1G , NTMFS4D2N10MDT1G , NTMFS5C404NLTT1G , NTMFS5C404NT3G , NTMFS5C406NLT1G , P60NF06 , NTMFS5C410NT3G , NTMFS5C423NLT1G , NTMFS5C426NLT1G , NTMFS5C426NT1G , NTMFS5C430NLT1G , NTMFS5C430NLT3G , NTMFS5C442NLT1G , NTMFS5C442NT3G .
History: CS20N60V
History: CS20N60V
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Список транзисторов
Обновления
MOSFET: AUN084N10 | AUN065N10 | AUN063N10 | AUN062N08BG | AUN060N08AG | AUN053N10 | AUN050N08BGL | AUN045N085 | AUN042N055 | AUN036N10 | AUD069N10A | AUD062N08BG | AUD060N08AG | AUD060N055 | AUD056N08BGL | AUB062N08BG
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