Справочник MOSFET. NTMFS5C406NT1G

 

NTMFS5C406NT1G Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NTMFS5C406NT1G
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 179 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 353 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 116 ns
   Cossⓘ - Выходная емкость: 4530 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0008 Ohm
   Тип корпуса: DFN5
     - подбор MOSFET транзистора по параметрам

 

NTMFS5C406NT1G Datasheet (PDF)

 ..1. Size:121K  1
 ntmfs5c406nt1g.pdf pdf_icon

NTMFS5C406NT1G

NTMFS5C406NPower MOSFET40 V, 0.8 mW, 353 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)40 V 0.8 mW @ 10 V

 3.1. Size:159K  1
 ntmfs5c406nlt1g.pdf pdf_icon

NTMFS5C406NT1G

NTMFS5C406NLMOSFET Power, Single,N-Channel40 V, 0.7 mW, 362 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant0.7 mW @ 10 V40 V 362 AMAXIMUM RATINGS (TJ = 25C unless oth

 3.2. Size:121K  onsemi
 ntmfs5c406n.pdf pdf_icon

NTMFS5C406NT1G

NTMFS5C406NPower MOSFET40 V, 0.8 mW, 353 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)40 V 0.8 mW @ 10 V

 3.3. Size:159K  onsemi
 ntmfs5c406nl.pdf pdf_icon

NTMFS5C406NT1G

NTMFS5C406NLMOSFET Power, Single,N-Channel40 V, 0.7 mW, 362 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant0.7 mW @ 10 V40 V 362 AMAXIMUM RATINGS (TJ = 25C unless oth

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