All MOSFET. NTMFS5C406NT1G Datasheet

 

NTMFS5C406NT1G Datasheet and Replacement


   Type Designator: NTMFS5C406NT1G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 179 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 353 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 116 nS
   Cossⓘ - Output Capacitance: 4530 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0008 Ohm
   Package: DFN5
 

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NTMFS5C406NT1G Datasheet (PDF)

 ..1. Size:121K  1
 ntmfs5c406nt1g.pdf pdf_icon

NTMFS5C406NT1G

NTMFS5C406NPower MOSFET40 V, 0.8 mW, 353 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)40 V 0.8 mW @ 10 V

 3.1. Size:159K  1
 ntmfs5c406nlt1g.pdf pdf_icon

NTMFS5C406NT1G

NTMFS5C406NLMOSFET Power, Single,N-Channel40 V, 0.7 mW, 362 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant0.7 mW @ 10 V40 V 362 AMAXIMUM RATINGS (TJ = 25C unless oth

 3.2. Size:121K  onsemi
 ntmfs5c406n.pdf pdf_icon

NTMFS5C406NT1G

NTMFS5C406NPower MOSFET40 V, 0.8 mW, 353 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)40 V 0.8 mW @ 10 V

 3.3. Size:159K  onsemi
 ntmfs5c406nl.pdf pdf_icon

NTMFS5C406NT1G

NTMFS5C406NLMOSFET Power, Single,N-Channel40 V, 0.7 mW, 362 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant0.7 mW @ 10 V40 V 362 AMAXIMUM RATINGS (TJ = 25C unless oth

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History: PSMN023-40YLC

Keywords - NTMFS5C406NT1G MOSFET datasheet

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