NTMFS6H801NT1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMFS6H801NT1G
Código: 6H801N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 166 W
Voltaje máximo drenador - fuente |Vds|: 80 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 157 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 64 nC
Tiempo de subida (tr): 74 nS
Conductancia de drenaje-sustrato (Cd): 586 pF
Resistencia entre drenaje y fuente RDS(on): 0.0028 Ohm
Paquete / Cubierta: DFN5
Búsqueda de reemplazo de MOSFET NTMFS6H801NT1G
NTMFS6H801NT1G Datasheet (PDF)
ntmfs6h801nt1g.pdf
NTMFS6H801NPower MOSFET80 V, 2.8 mW, 157 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)80 V 2.8 mW @ 10 V
ntmfs6h801n.pdf
NTMFS6H801NPower MOSFET80 V, 2.8 mW, 157 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)80 V 2.8 mW @ 10 V
ntmfs6h801nl.pdf
MOSFET - Power, SingleN-Channel80 V, 2.7 mW, 160 ANTMFS6H801NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAX2.7 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)
ntmfs6h800nl.pdf
NTMFS6H800NLPower MOSFETSingle N-Channel, 80 V, 1.9 mW, 224 AFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)Parameter Symbol V
ntmfs6h800n.pdf
NTMFS6H800NMOSFET Power, Single,N-Channel80 V, 2.1 mW, 203 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant80 V 2.1 mW @ 10 V 203 AMAXIMUM RATINGS (TJ = 25C unless other
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