All MOSFET. NTMFS6H801NT1G Datasheet

 

NTMFS6H801NT1G MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTMFS6H801NT1G
   Marking Code: 6H801N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 166 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 157 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 64 nC
   trⓘ - Rise Time: 74 nS
   Cossⓘ - Output Capacitance: 586 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
   Package: DFN5

 NTMFS6H801NT1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTMFS6H801NT1G Datasheet (PDF)

 ..1. Size:98K  1
 ntmfs6h801nt1g.pdf

NTMFS6H801NT1G NTMFS6H801NT1G

NTMFS6H801NPower MOSFET80 V, 2.8 mW, 157 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)80 V 2.8 mW @ 10 V

 3.1. Size:98K  onsemi
 ntmfs6h801n.pdf

NTMFS6H801NT1G NTMFS6H801NT1G

NTMFS6H801NPower MOSFET80 V, 2.8 mW, 157 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)80 V 2.8 mW @ 10 V

 3.2. Size:174K  onsemi
 ntmfs6h801nl.pdf

NTMFS6H801NT1G NTMFS6H801NT1G

MOSFET - Power, SingleN-Channel80 V, 2.7 mW, 160 ANTMFS6H801NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAX2.7 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)

 5.1. Size:194K  onsemi
 ntmfs6h800nl.pdf

NTMFS6H801NT1G NTMFS6H801NT1G

NTMFS6H800NLPower MOSFETSingle N-Channel, 80 V, 1.9 mW, 224 AFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)Parameter Symbol V

 5.2. Size:179K  onsemi
 ntmfs6h800n.pdf

NTMFS6H801NT1G NTMFS6H801NT1G

NTMFS6H800NMOSFET Power, Single,N-Channel80 V, 2.1 mW, 203 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant80 V 2.1 mW @ 10 V 203 AMAXIMUM RATINGS (TJ = 25C unless other

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