SVF4N70F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SVF4N70F
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 33 W
   Voltaje máximo drenador - fuente |Vds|: 700 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 4 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 10.34 nC
   Tiempo de subida (tr): 34.4 nS
   Conductancia de drenaje-sustrato (Cd): 56.43 pF
   Resistencia entre drenaje y fuente RDS(on): 3 Ohm
   Paquete / Cubierta: TO220F

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SVF4N70F Datasheet (PDF)

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SVF4N70F/D 4A700V N 2SVF4N70F/D N MOS F-CellTM VDMOS 13

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svf4n70mj.pdf

SVF4N70MJ 4A700V N 2SVF4N70MJ N MOS F-CellTM VDMOS 13

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SVF4N60D/F/T/M 4A600V N SVF4N60D/F/T/M N MOS F-CellTM VDMOS

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SVF4N60D/F/T/M 4A600V N 2SVF4N60D/F/T/M N MOS F-CellTM VDMOS 113TO-252-2L3

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SVF4N65F/M/MJ/D 4A650V N SVF4N65F/M/MJ/D N MOS F-CellTM VDMOS AC-DC

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SVF4N65T/F(G)/M_Datasheet 4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N65T/F(G)/M is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior

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