SVF4N70F Datasheet and Replacement
Type Designator: SVF4N70F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 33 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 34.4 nS
Cossⓘ - Output Capacitance: 56.43 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: TO220F
SVF4N70F substitution
SVF4N70F Datasheet (PDF)
svf4n70f svf4n70dtr.pdf

SVF4N70F/D 4A700V N 2SVF4N70F/D N MOS F-CellTM VDMOS 13
svf4n60caf svf4n60cak svf4n60cad svf4n60cat svf4n60camn svf4n60camj.pdf

SVF4N60CAF/K/D/T/MN/MJ_Datasheet 4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switc
svf4n60d svf4n60f svf4n60t svf4n60m.pdf

SVF4N60D/F/T/M 4A600V N SVF4N60D/F/T/M N MOS F-CellTM VDMOS
Datasheet: SVF4N65CADTR , SVF4N65CAFJH , SVF4N65CF , SVF4N65CMJ , SVF4N65DTR , SVF4N65MJ , SVF4N65RDTR , SVF4N70DTR , 2N7002 , SVF4N70MJ , SVF5N60DTR , SVF5N65DTR , SVF6N25CD , SVF6N60DTR , SVF6N60FQ , SVF6N70DTR , SVF6N70K .
History: HAT2299WP
Keywords - SVF4N70F MOSFET datasheet
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History: HAT2299WP



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