SVF4N70MJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SVF4N70MJ
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 80 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 13.33 nC
   trⓘ - Tiempo de subida: 28.6 nS
   Cossⓘ - Capacitancia de salida: 58.3 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm
   Paquete / Cubierta: TO251

Búsqueda de reemplazo de MOSFET SVF4N70MJ

SVF4N70MJ Datasheet (PDF)

..1. Size:306K silan
svf4n70mj.pdf

SVF4N70MJ 4A700V N 2SVF4N70MJ N MOS F-CellTM VDMOS 13

7.1. Size:408K silan
svf4n70f svf4n70dtr.pdf

SVF4N70F/D 4A700V N 2SVF4N70F/D N MOS F-CellTM VDMOS 13

9.1. Size:801K 1
svf4n60caf svf4n60cak svf4n60cad svf4n60cat svf4n60camn svf4n60camj.pdf

SVF4N60CAF/K/D/T/MN/MJ_Datasheet 4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switc

9.2. Size:800K silan
svf4n60d svf4n60f svf4n60t svf4n60m.pdf

SVF4N60D/F/T/M 4A600V N SVF4N60D/F/T/M N MOS F-CellTM VDMOS

9.3. Size:449K silan
svf4n65f svf4n65mj svf4n65m svf4n65dtr.pdf

SVF4N65F/M/MJ/D 4A650V N 2SVF4N65F/M/MJ/D N MOS F-CellTM VDMOS 1 31. 2.

9.4. Size:479K silan
svf4n60f svf4n60t svf4n60dtr svf4n60m.pdf

SVF4N60D/F/T/M 4A600V N 2SVF4N60D/F/T/M N MOS F-CellTM VDMOS 113TO-252-2L3

9.5. Size:697K silan
svf4n65f svf4n65m svf4n65mj svf4n65d.pdf

SVF4N65F/M/MJ/D 4A650V N SVF4N65F/M/MJ/D N MOS F-CellTM VDMOS AC-DC

9.6. Size:642K silan
svf4n65.pdf

SVF4N65T/F(G)/M_Datasheet 4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N65T/F(G)/M is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior

9.7. Size:473K silan
svf4n60caf svf4n60cak svf4n60cat svf4n60cadtr svf4n60camn svf4n60camj.pdf