SVF4N70MJ Datasheet. Specs and Replacement
Type Designator: SVF4N70MJ 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 80 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 28.6 nS
Cossⓘ - Output Capacitance: 58.3 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: TO251
SVF4N70MJ substitution
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SVF4N70MJ datasheet
svf4n70mj.pdf
SVF4N70MJ 4A 700V N 2 SVF4N70MJ N MOS F-CellTM VDMOS 1 3 ... See More ⇒
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SVF4N60CAF/K/D/T/MN/MJ_Datasheet 4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switc... See More ⇒
Detailed specifications: SVF4N65CAFJH, SVF4N65CF, SVF4N65CMJ, SVF4N65DTR, SVF4N65MJ, SVF4N65RDTR, SVF4N70DTR, SVF4N70F, AOD4184A, SVF5N60DTR, SVF5N65DTR, SVF6N25CD, SVF6N60DTR, SVF6N60FQ, SVF6N70DTR, SVF6N70K, SVF6N70MJG
Keywords - SVF4N70MJ MOSFET specs
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