FDP18N50 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDP18N50
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 235 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 18 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.265 Ohm
Paquete / Cubierta: TO220
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FDP18N50 PDF Specs
fdp18n50 fdpf18n50 fdpf18n50t.pdf
November 2013 FDP18N50 / FDPF18N50 / FDPF18N50T N-Channel UniFETTM MOSFET 500 V, 18 A, 265 m Features Description RDS(on) = 220 m (Typ.) @ VGS = 10 V, ID = 9 A UniFETTM MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 45 nC) This MOSFET is tailored to reduce on-state resistance, and to Low... See More ⇒
fdp18n50 fdpf18n50.pdf
April 2007 TM UniFET FDP18N50 / FDPF18N50 500V N-Channel MOSFET Features Description 18A, 500V, RDS(on) = 0.265 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 45 nC) stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially ... See More ⇒
fdp18n50 fdpf18n50 fdpf18n50t.pdf
FDP18N50 / FDPF18N50 / FDPF18N50T N-Channel UniFETTM MOSFET 500 V, 18 A, 265 m Features RDS(on) = 220 m (Typ.) @ VGS = 10 V, ID = 9 A Description Low Gate Charge (Typ. 45 nC) UniFETTM MOSFET is ON Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. Low Crss (Typ. 25 pF) This MOSFET is tailored to reduce on-state resistance, and to... See More ⇒
fdp18n50 fdpf18n50.pdf
October 2006 TM UniFET FDP18N50 / FDPF18N50 500V N-Channel MOSFET Features Description 18A, 500V, RDS(on) = 0.265 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 45 nC) stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially... See More ⇒
Otros transistores... STM4470 , FDP150N10AF102 , STM4460 , FDP15N40 , STM4446 , FDP16AN08A0 , FDP18N20F , STM4439A , IRFB4227 , FDP19N40 , STM4437A , FDP20N50 , FDP20N50F , FDP22N50N , FDP24N40 , STM4435 , FDP2532 .
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