All MOSFET. FDP18N50 Datasheet

 

FDP18N50 Datasheet and Replacement


   Type Designator: FDP18N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 235 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 45 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.265 Ohm
   Package: TO220
 

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FDP18N50 Datasheet (PDF)

 ..1. Size:870K  fairchild semi
fdp18n50 fdpf18n50 fdpf18n50t.pdf pdf_icon

FDP18N50

November 2013FDP18N50 / FDPF18N50 / FDPF18N50TN-Channel UniFETTM MOSFET500 V, 18 A, 265 mFeatures Description RDS(on) = 220 m (Typ.) @ VGS = 10 V, ID = 9 A UniFETTM MOSFET is Fairchild Semiconductors high voltageMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 45 nC)This MOSFET is tailored to reduce on-state resistance, and to Low

 ..2. Size:466K  fairchild semi
fdp18n50 fdpf18n50.pdf pdf_icon

FDP18N50

April 2007TMUniFETFDP18N50 / FDPF18N50500V N-Channel MOSFETFeatures Description 18A, 500V, RDS(on) = 0.265 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 45 nC)stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especially

 ..3. Size:1572K  onsemi
fdp18n50 fdpf18n50 fdpf18n50t.pdf pdf_icon

FDP18N50

FDP18N50 / FDPF18N50 / FDPF18N50TN-Channel UniFETTM MOSFET500 V, 18 A, 265 mFeatures RDS(on) = 220 m (Typ.) @ VGS = 10 V, ID = 9 ADescription Low Gate Charge (Typ. 45 nC)UniFETTM MOSFET is ON Semiconductors high voltage MOSFET family based on planar stripe and DMOS technology. Low Crss (Typ. 25 pF)This MOSFET is tailored to reduce on-state resistance, and to

 ..4. Size:1033K  onsemi
fdp18n50 fdpf18n50.pdf pdf_icon

FDP18N50

October 2006TMUniFETFDP18N50 / FDPF18N50500V N-Channel MOSFETFeatures Description 18A, 500V, RDS(on) = 0.265 @VGS = 10 V These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 45 nC)stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especially

Datasheet: STM4470 , FDP150N10AF102 , STM4460 , FDP15N40 , STM4446 , FDP16AN08A0 , FDP18N20F , STM4439A , IRFB4110 , FDP19N40 , STM4437A , FDP20N50 , FDP20N50F , FDP22N50N , FDP24N40 , STM4435 , FDP2532 .

History: HAF2011 | STP21NM60N

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