FDP55N06 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDP55N06

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 114 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 55 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm

Encapsulados: TO220

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FDP55N06 datasheet

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 fdp55n06 fdpf55n06.pdf pdf_icon

FDP55N06

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FDP55N06

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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 fdp5500.pdf pdf_icon

FDP55N06

April 2009 FDP5500_F085 N-Channel UltraFET Power MOSFET 55V, 80A, 7m Applications Features Typ rDS(on) = 5.1m at VGS = 10V, ID = 80A DC Linear Mode Control Typ Qg(10) = 114nC at VGS = 10V Solenoid and Motor Control Simulation Models Switching Regulators -Temperature Compensated PSPICE and SABERTM Automotive Systems Models Peak Current vs Pulse Width Curve UIS Ra

 9.2. Size:458K  fairchild semi
 fdp5500 f085.pdf pdf_icon

FDP55N06

April 2009 FDP5500_F085 N-Channel UltraFET Power MOSFET 55V, 80A, 7m Applications Features Typ rDS(on) = 5.1m at VGS = 10V, ID = 80A DC Linear Mode Control Typ Qg(10) = 114nC at VGS = 10V Solenoid and Motor Control Simulation Models Switching Regulators -Temperature Compensated PSPICE and SABERTM Automotive Systems Models Peak Current vs Pulse Width Curve UIS Ra

MOSTRAR MÁS

Otros transistores... FDP3672, FDP3682, STM301N, FDP42AN15A0, FDP51N25, FDP52N20, STM201N, FDP5500F085, 12N60, FDP5800, FDP5N50NZ, FDP5N60NZ, STM122N, FDP61N20, STM121N, FDP65N06, FDP75N08A