FDP55N06 MOSFET Datasheet: N-Ch, 60V, 55A. Full specification with pinout and replacement list

FDP55N06 Specs and Replacement

   Type Designator: FDP55N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 114 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: TO220

FDP55N06 substitution

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FDP55N06 datasheet

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

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April 2009 FDP5500_F085 N-Channel UltraFET Power MOSFET 55V, 80A, 7m Applications Features Typ rDS(on) = 5.1m at VGS = 10V, ID = 80A DC Linear Mode Control Typ Qg(10) = 114nC at VGS = 10V Solenoid and Motor Control Simulation Models Switching Regulators -Temperature Compensated PSPICE and SABERTM Automotive Systems Models Peak Current vs Pulse Width Curve UIS Ra... See More ⇒

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