FDP55N06 Datasheet and Replacement

TMUniFETFDP55N06/FDPF55N0660V N-Channel MOSFETFeatures Description 55A, 60V, RDS(on) = 0.022 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 30 nC) transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Low Crss ( typical 60 pF)This advanced technology has been especially tailored to

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

April 2009FDP5500_F085N-Channel UltraFET Power MOSFET55V, 80A, 7m Applications Features Typ rDS(on) = 5.1m at VGS = 10V, ID = 80A DC Linear Mode Control Typ Qg(10) = 114nC at VGS = 10V Solenoid and Motor Control Simulation Models Switching Regulators -Temperature Compensated PSPICE and SABERTM Automotive SystemsModels Peak Current vs Pulse Width Curve UIS Ra

April 2009FDP5500_F085N-Channel UltraFET Power MOSFET55V, 80A, 7m Applications Features Typ rDS(on) = 5.1m at VGS = 10V, ID = 80A DC Linear Mode Control Typ Qg(10) = 114nC at VGS = 10V Solenoid and Motor Control Simulation Models Switching Regulators -Temperature Compensated PSPICE and SABERTM Automotive SystemsModels Peak Current vs Pulse Width Curve UIS Ra