Справочник MOSFET. FDP55N06

 

FDP55N06 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDP55N06
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 114 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 55 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 30 nC
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.022 Ohm
   Тип корпуса: TO220

 Аналог (замена) для FDP55N06

 

 

FDP55N06 Datasheet (PDF)

 ..1. Size:1209K  fairchild semi
 fdp55n06 fdpf55n06.pdf

FDP55N06 FDP55N06

TMUniFETFDP55N06/FDPF55N0660V N-Channel MOSFETFeatures Description 55A, 60V, RDS(on) = 0.022 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 30 nC) transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Low Crss ( typical 60 pF)This advanced technology has been especially tailored to

 ..2. Size:1519K  onsemi
 fdp55n06 fdpf55n06.pdf

FDP55N06 FDP55N06

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:435K  fairchild semi
 fdp5500.pdf

FDP55N06 FDP55N06

April 2009FDP5500_F085N-Channel UltraFET Power MOSFET55V, 80A, 7m Applications Features Typ rDS(on) = 5.1m at VGS = 10V, ID = 80A DC Linear Mode Control Typ Qg(10) = 114nC at VGS = 10V Solenoid and Motor Control Simulation Models Switching Regulators -Temperature Compensated PSPICE and SABERTM Automotive SystemsModels Peak Current vs Pulse Width Curve UIS Ra

 9.2. Size:458K  fairchild semi
 fdp5500 f085.pdf

FDP55N06 FDP55N06

April 2009FDP5500_F085N-Channel UltraFET Power MOSFET55V, 80A, 7m Applications Features Typ rDS(on) = 5.1m at VGS = 10V, ID = 80A DC Linear Mode Control Typ Qg(10) = 114nC at VGS = 10V Solenoid and Motor Control Simulation Models Switching Regulators -Temperature Compensated PSPICE and SABERTM Automotive SystemsModels Peak Current vs Pulse Width Curve UIS Ra

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