FDP61N20 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDP61N20

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 417 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 61 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.041 Ohm

Encapsulados: TO220

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FDP61N20 datasheet

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FDP61N20

September 2005 TM UniFET FDP61N20 200V N-Channel MOSFET Features Description 61A, 200V, RDS(on) = 0.041 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 58 nC) DMOS technology. Low Crss ( typical 80 pF) This advanced technology has been especially tailore

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FDP61N20

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... FDP52N20, STM201N, FDP5500F085, FDP55N06, FDP5800, FDP5N50NZ, FDP5N60NZ, STM122N, IRF530, STM121N, FDP65N06, FDP75N08A, FDP7N50, FDP7N60NZ, STM105N, FDP80N06, FDP8440