FDP61N20 Datasheet. Specs and Replacement

Type Designator: FDP61N20

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 417 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 61 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm

Package: TO220

FDP61N20 substitution

- MOSFET ⓘ Cross-Reference Search

 

FDP61N20 datasheet

 ..1. Size:657K  fairchild semi
 fdp61n20.pdf pdf_icon

FDP61N20

September 2005 TM UniFET FDP61N20 200V N-Channel MOSFET Features Description 61A, 200V, RDS(on) = 0.041 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 58 nC) DMOS technology. Low Crss ( typical 80 pF) This advanced technology has been especially tailore... See More ⇒

 ..2. Size:519K  onsemi
 fdp61n20.pdf pdf_icon

FDP61N20

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Detailed specifications: FDP52N20, STM201N, FDP5500F085, FDP55N06, FDP5800, FDP5N50NZ, FDP5N60NZ, STM122N, IRF530, STM121N, FDP65N06, FDP75N08A, FDP7N50, FDP7N60NZ, STM105N, FDP80N06, FDP8440

Keywords - FDP61N20 MOSFET specs

 FDP61N20 cross reference

 FDP61N20 equivalent finder

 FDP61N20 pdf lookup

 FDP61N20 substitution

 FDP61N20 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility