All MOSFET. FDP61N20 Datasheet

 

FDP61N20 Datasheet and Replacement


   Type Designator: FDP61N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 417 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 61 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
   Package: TO220
      - MOSFET Cross-Reference Search

 

FDP61N20 Datasheet (PDF)

 ..1. Size:657K  fairchild semi
 fdp61n20.pdf pdf_icon

FDP61N20

September 2005TMUniFETFDP61N20200V N-Channel MOSFETFeatures Description 61A, 200V, RDS(on) = 0.041 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 58 nC)DMOS technology. Low Crss ( typical 80 pF)This advanced technology has been especially tailore

 ..2. Size:519K  onsemi
 fdp61n20.pdf pdf_icon

FDP61N20

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: JCS7N60CB | IRFP251 | 4N70KG-TMS4-T | SSM9926O | HYG013N03LS1C2 | RSS065N06FU6TB | SM3023NSV

Keywords - FDP61N20 MOSFET datasheet

 FDP61N20 cross reference
 FDP61N20 equivalent finder
 FDP61N20 lookup
 FDP61N20 substitution
 FDP61N20 replacement

 

 
Back to Top

 


 
.