FDP65N06 Todos los transistores

 

FDP65N06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDP65N06
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 135 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 65 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
   Paquete / Cubierta: TO220
     - Selección de transistores por parámetros

 

FDP65N06 Datasheet (PDF)

 ..1. Size:598K  fairchild semi
 fdp65n06.pdf pdf_icon

FDP65N06

June 2006 TMUniFETFDP65N0660V N-Channel MOSFETFeatures Description 65A, 60V, RDS(on) = 0.016 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 132nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 35pF)This advanced technology has been especially tailored to

 ..2. Size:1167K  onsemi
 fdp65n06.pdf pdf_icon

FDP65N06

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... FDP5500F085 , FDP55N06 , FDP5800 , FDP5N50NZ , FDP5N60NZ , STM122N , FDP61N20 , STM121N , STP80NF70 , FDP75N08A , FDP7N50 , FDP7N60NZ , STM105N , FDP80N06 , FDP8440 , FDP8441 , FDP8443F085 .

History: IXTP50N28T | 3SK249

 

 
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