FDP65N06 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDP65N06

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 135 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 65 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm

Encapsulados: TO220

 Búsqueda de reemplazo de FDP65N06 MOSFET

- Selecciónⓘ de transistores por parámetros

 

FDP65N06 datasheet

 ..1. Size:598K  fairchild semi
 fdp65n06.pdf pdf_icon

FDP65N06

June 2006 TM UniFET FDP65N06 60V N-Channel MOSFET Features Description 65A, 60V, RDS(on) = 0.016 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 132nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 35pF) This advanced technology has been especially tailored to

 ..2. Size:1167K  onsemi
 fdp65n06.pdf pdf_icon

FDP65N06

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... FDP5500F085, FDP55N06, FDP5800, FDP5N50NZ, FDP5N60NZ, STM122N, FDP61N20, STM121N, NCEP15T14, FDP75N08A, FDP7N50, FDP7N60NZ, STM105N, FDP80N06, FDP8440, FDP8441, FDP8443F085