FDP65N06 MOSFET Datasheet: N-Ch, 60V, 65A. Full specification with pinout and replacement list

FDP65N06 Specs and Replacement

   Type Designator: FDP65N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 135 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 65 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: TO220

FDP65N06 substitution

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FDP65N06 datasheet

..1. Size:598K fairchild semi
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June 2006 TM UniFET FDP65N06 60V N-Channel MOSFET Features Description 65A, 60V, RDS(on) = 0.016 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 132nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 35pF) This advanced technology has been especially tailored to ... See More ⇒

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Detailed specifications: FDP5500F085 , FDP55N06 , FDP5800 , FDP5N50NZ , FDP5N60NZ , STM122N , FDP61N20 , STM121N , NCEP15T14 , FDP75N08A , FDP7N50 , FDP7N60NZ , STM105N , FDP80N06 , FDP8440 , FDP8441 , FDP8443F085 .