FDP75N08A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDP75N08A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 137 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 75 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 75 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm

Encapsulados: TO220

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FDP75N08A datasheet

 ..1. Size:626K  fairchild semi
 fdp75n08 fdp75n08a.pdf pdf_icon

FDP75N08A

July 2006 TM UniFET FDP75N08A 75V N-Channel MOSFET Features Description 75A, 75V, RDS(on) = 0.011 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 145nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 86pF) This advanced technology has been especially tailored to

 ..2. Size:1266K  onsemi
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FDP75N08A

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... FDP55N06, FDP5800, FDP5N50NZ, FDP5N60NZ, STM122N, FDP61N20, STM121N, FDP65N06, AON7506, FDP7N50, FDP7N60NZ, STM105N, FDP80N06, FDP8440, FDP8441, FDP8443F085, FDP8447L