All MOSFET. FDP75N08A Datasheet

 

FDP75N08A Datasheet and Replacement


   Type Designator: FDP75N08A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 137 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 80 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: TO220
 

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FDP75N08A Datasheet (PDF)

 ..1. Size:626K  fairchild semi
 fdp75n08 fdp75n08a.pdf pdf_icon

FDP75N08A

July 2006 TMUniFETFDP75N08A75V N-Channel MOSFETFeatures Description 75A, 75V, RDS(on) = 0.011 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 145nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 86pF)This advanced technology has been especially tailored to

 ..2. Size:1266K  onsemi
 fdp75n08a.pdf pdf_icon

FDP75N08A

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: FDP55N06 , FDP5800 , FDP5N50NZ , FDP5N60NZ , STM122N , FDP61N20 , STM121N , FDP65N06 , IRFZ24N , FDP7N50 , FDP7N60NZ , STM105N , FDP80N06 , FDP8440 , FDP8441 , FDP8443F085 , FDP8447L .

History: IPW60R075CPA

Keywords - FDP75N08A MOSFET datasheet

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