FDP75N08A Datasheet. Specs and Replacement

Type Designator: FDP75N08A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 137 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: TO220

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FDP75N08A datasheet

 ..1. Size:626K  fairchild semi
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FDP75N08A

July 2006 TM UniFET FDP75N08A 75V N-Channel MOSFET Features Description 75A, 75V, RDS(on) = 0.011 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 145nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 86pF) This advanced technology has been especially tailored to ... See More ⇒

 ..2. Size:1266K  onsemi
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FDP75N08A

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Detailed specifications: FDP55N06, FDP5800, FDP5N50NZ, FDP5N60NZ, STM122N, FDP61N20, STM121N, FDP65N06, AO4407A, FDP7N50, FDP7N60NZ, STM105N, FDP80N06, FDP8440, FDP8441, FDP8443F085, FDP8447L

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